K9F1208B0B Datasheet | Samsung Semiconductor

.. K9F1208R0B K9F1208B0B K9F1208U0B Preliminary FLASH MEMORY Document Title 64M x 8 Bit NAND Flash Memory Revision History Revision No. History 0.0 0.1 Initial issue. 1. Note 1 ( Program/Erase Characteristics) is added( page 14 ) 2. NAND Flash Technical Notes is changed. -Invalid block -> initial invalid block ( page 16 ) -Error in write or read operation ( page 17 ) -Program Flow Chart ( page 17 ) 3. Vcc range is changed -2.4V~2.9V -> 2.5V~2.9V -1.7V~1.95V ->1.65V~1.95V 4. Multi plane operation and Copy-Back Program are not supported with 1.8V device. Draft Date Apr. 24th 2004 Oct. 11th.2004 Remark Advance Preliminary Note : For more detailed Features and specifications including FAQ, please refer to Samsung’s Flash web site. http://.samsung./Products/Semiconductor/Flash/Technical Info/datasheets.htm The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have any questions, please contact the SAMSUNG branch office near you. K9F1208R0B K9F1208B0B K9F1208U0B Preliminary FLASH MEMORY 64M x 8 Bit NAND Flash Memory PRODUCT LIST Part Number K9F1208R0B-G,J K9F1208B0B-Y,P K9F1208B0B-G,J K9F1208U0B-Y,P K9F1208U0B-G,J K9F1208U0B-V,F 2.7 ~ 3.6V Vcc Range 1.65 ~ 1.95V 2.5 ~ 2.9V PKG Type FBGA TSOP1 FBGA TSOP1 FBGA WSOP1 Features - Voltage Supply - 1.8V device(K9F1208R0B) : 1.65~1.95V - 2.7V device(K9F1208B0B) : 2.5~2.9V - 3.3V device(K9F1208U0B) : 2.7 ~ 3.6 V - Organization - Memory Cell Array : (64M + 2048K)bit x 8 bit - Data Register : (512 + 16)bit x 8bit - Automatic Program and Erase - Page Program : (512 + 16)Byte - Block Erase : (16K + 512)Byte - Page Read...