• Part: K9F1208B0B
  • Description: 64M x 8 Bit NAND Flash Memory
  • Manufacturer: Samsung Semiconductor
  • Size: 1.03 MB
K9F1208B0B Datasheet (PDF) Download
Samsung Semiconductor
K9F1208B0B

Key Features

  • Voltage Supply - 1.8V device(K9F1208R0B) : 1.65~1.95V - 2.7V device(K9F1208B0B) : 2.5~2.9V - 3.3V device(K9F1208U0B) : 2.7 ~ 3.6 V
  • Organization - Memory Cell Array : (64M + 2048K)bit x 8 bit - Data Register : (512 + 16)bit x 8bit
  • Automatic Program and Erase - Page Program : (512 + 16)Byte - Block Erase : (16K + 512)Byte
  • Page Read Operation - Page Size : (512 + 16)Byte - Random Access : 15µs(Max.) - Serial Page Access : 50ns(Min.) (*K9F1208R0B : tRC = 60ns(Min.)
  • Fast Write Cycle Time - Program time : 200µ