K9F1208B0B
K9F1208B0B is 64M x 8 Bit NAND Flash Memory manufactured by Samsung Semiconductor.
features and specifications including FAQ, please refer to Samsung’s Flash web site. http://.samsung./Products/Semiconductor/Flash/Technical Info/datasheets.htm The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have any questions, please contact the SAMSUNG branch office near you.
K9F1208R0B K9F1208B0B K9F1208U0B
Preliminary FLASH MEMORY
64M x 8 Bit NAND Flash Memory
PRODUCT LIST
Part Number K9F1208R0B-G,J K9F1208B0B-Y,P K9F1208B0B-G,J K9F1208U0B-Y,P K9F1208U0B-G,J K9F1208U0B-V,F 2.7 ~ 3.6V Vcc Range 1.65 ~ 1.95V 2.5 ~ 2.9V PKG Type FBGA TSOP1 FBGA TSOP1 FBGA WSOP1
FEATURES
- Voltage Supply
- 1.8V device(K9F1208R0B) : 1.65~1.95V
- 2.7V device(K9F1208B0B) : 2.5~2.9V
- 3.3V device(K9F1208U0B) : 2.7 ~ 3.6 V
- Organization
- Memory Cell Array : (64M + 2048K)bit x 8 bit
- Data Register : (512 + 16)bit x 8bit
- Automatic Program and Erase
- Page Program : (512 + 16)Byte
- Block Erase : (16K + 512)Byte
- Page Read Operation
- Page Size : (512 + 16)Byte
- Random Access : 15µs(Max.)
- Serial Page Access : 50ns(Min.) (- K9F1208R0B : t RC = 60ns(Min.)
- Fast Write Cycle Time
- Program time : 200µs(Typ.)
- Block Erase Time : 2ms(Typ.)
- mand/Address/Data Multiplexed I/O Port
- Hardware Data Protection
- Program/Erase Lockout During Power Transitions
- Reliable CMOS Floating-Gate Technology
- Endurance : 100K Program/Erase Cycles
- Data Retention : 10 Years
- mand Register Operation
- Intelligent Copy-Back
- Unique ID for Copyright Protection
- Package
- K9F1208X0B-YCB0/YIB0 48
- Pin TSOP I (12 x 20 / 0.5 mm pitch)
- K9F1208X0B-GCB0/GIB0 63- Ball FBGA (8.5 x 13 , 1.0 mm width)
- K9F1208U0B-VCB0/VIB0 48
- Pin WSOP I...
