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K9F1208U0M-YCB0 Datasheet - Samsung semiconductor

64M x 8 Bit NAND Flash Memory

K9F1208U0M-YCB0 Features

* Voltage Supply : 2.7V~3.6V

* Organization - Memory Cell Array : (64M + 2,048K)bit x 8bit - Data Register : (512 + 16)bit x8bit multipled by four planes

* Automatic Program and Erase - Page Program : (512 + 16)Byte - Block Erase : (16K + 512)Byte

* 528-Byte Page Read

K9F1208U0M-YCB0 General Description

The K9F1208U0M is a 64M(67,108,864)x8bit NAND Flash Memory with a spare 2,048K(2,097,152)x8bit. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation can be performed in typical 200µs on the 528-byte page and an erase operation can be pe.

K9F1208U0M-YCB0 Datasheet (1.11 MB)

Preview of K9F1208U0M-YCB0 PDF

Datasheet Details

Part number:

K9F1208U0M-YCB0

Manufacturer:

Samsung semiconductor

File Size:

1.11 MB

Description:

64m x 8 bit nand flash memory.
K9F1208U0M-YCB0, K9F1208U0M-YIB0 Document Title 64M x 8 Bit NAND Flash Memory Revision History Revision No 0.0 FLASH MEMORY History 1. Initial issue.

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K9F1208U0M-YCB0 64M Bit NAND Flash Memory Samsung semiconductor

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