K9F1G08R0A - 128M x 8 Bit / 256M x 8 Bit NAND Flash Memory

Samsung semiconductor

Datasheet Details

Part number	K9F1G08R0A
Manufacturer	Samsung semiconductor
File Size	1.05 MB
Description	128M x 8 Bit / 256M x 8 Bit NAND Flash Memory
Datasheet	K9F1G08R0A_Samsungsemiconductor.pdf

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Voltage Supply -1.8V device(K9F1G08R0A): 1.65V~1.95V -3.3V device(K9F1G08U0A): 2.7 V ~3.6 V.
Organization - Memory Cell Array : (128M + 4,096K)bit x 8bit - Data Register : (2K + 64)bit x8bit - Cache Register : (2K + 64)bit x8bit.
Automatic Program and Erase - Page Program : (2K + 64)Byte - Block Erase : (128K + 4K)Byte.
Page Read Operation - Page Size : 2K-Byte - Random Read : 25µs(Max. ) - Serial Access : 30ns(Min. ) - 3.3v device 50ns(Min. ) -1.8v device.

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Published: Oct 25, 2008 |