K9F1G08R0A Datasheet - Samsung semiconductor

128M x 8 Bit / 256M x 8 Bit NAND Flash Memory

K9F1G08R0A Features

* Voltage Supply -1.8V device(K9F1G08R0A): 1.65V~1.95V -3.3V device(K9F1G08U0A): 2.7 V ~3.6 V

* Organization - Memory Cell Array : (128M + 4,096K)bit x 8bit - Data Register : (2K + 64)bit x8bit - Cache Register : (2K + 64)bit x8bit

* Automatic Program and Erase - Page Program

K9F1G08R0A General Description

of Copy-back program is changed 4. Voltage range is changed -1.7V~1.95V -> 1.65V~1.95V 5. Note2 of Command Sets is added 1. CE access time : 23ns->35ns (p.11) 1. The value of tREA for 3.3V device is changed.(18ns->20ns) 2. EDO mode is added. 1. The flow chart to creat the initial invalid block table.

K9F1G08R0A Datasheet (1.05 MB)

K9F1G08R0A Datasheet Preview — Preview of K9F1G08R0A PDF

Datasheet Details

Part number:

K9F1G08R0A

Manufacturer:

Samsung semiconductor

File Size:

1.05 MB

Description:

128m x 8 bit / 256m x 8 bit nand flash memory.
K9F1G08R0A K9F1G08U0A K9K2G08U1A FLASH MEMORY Document Title 128M x 8 Bit / 256M x 8 Bit NAND Flash Memory Revision History Revision No 0.0 0.1 Hi.

📁 Related Datasheet

K9F1G08R0B FLASH MEMORY (Samsung Electronics)

K9F1G08B0C FLASH MEMORY (Samsung)

K9F1G08D0M 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory (Samsung semiconductor)

K9F1G08Q0A FLASH MEMORY (Samsung semiconductor)

K9F1G08Q0M 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory (Samsung semiconductor)

K9F1G08Q0M-PCB0 1Gb 1.8V NAND Flash Errata (Samsung)

K9F1G08Q0M-PIB0 1Gb 1.8V NAND Flash Errata (Samsung)

K9F1G08Q0M-YCB0 1Gb 1.8V NAND Flash Errata (Samsung)

K9F1G08Q0M-YIB0 1Gb 1.8V NAND Flash Errata (Samsung)

K9F1G08U0A FLASH MEMORY (Samsung semiconductor)

TAGS

K9F1G08R0A 128M Bit 256M Bit NAND Flash Memory Samsung semiconductor

Image Gallery

K9F1G08R0A Features

K9F1G08R0A General Description

Datasheet Details

File Size:

Description:

K9F1G08R0A Distributor