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K9F5608U0M-YIB0 Datasheet, Samsung semiconductor

K9F5608U0M-YIB0 Datasheet, Samsung semiconductor

K9F5608U0M-YIB0

datasheet Download (Size : 353.05KB)

K9F5608U0M-YIB0 Datasheet

K9F5608U0M-YIB0 memory equivalent, 32m x 8 bit nand flash memory.

K9F5608U0M-YIB0

datasheet Download (Size : 353.05KB)

K9F5608U0M-YIB0 Datasheet

Features and benefits


* Voltage Supply : 2.7V~3.6V
* Organization - Memory Cell Array : (32M + 1024K)bit x 8bit - Data Register : (512 + 16)bit x8bit
* Automatic Program and Erase .

Application

such as solid state file storage and other portable applications requiring non-volatility. PIN CONFIGURATION K9F5608U0M.

Description

- SE is recommended to coupled to GND or Vcc and should not be toggled during reading or programming. Draft Date April. 10th 1999 July. 23th 1999 Sep. 15th 1999 Remark Advanced Information Advanced Information Preliminary 0.3 Mar. 21th 2000 Prel.

Image gallery

K9F5608U0M-YIB0 Page 1 K9F5608U0M-YIB0 Page 2 K9F5608U0M-YIB0 Page 3

TAGS

K9F5608U0M-YIB0
32M
Bit
NAND
Flash
Memory
Samsung semiconductor

Manufacturer


Samsung semiconductor

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