K9K8G08U0M Datasheet - Samsung semiconductor

1G x 8 Bit / 2G x 8 Bit NAND Flash Memory

K9K8G08U0M Features

* Voltage Supply - 2.70V ~ 3.60V

* Organization - Memory Cell Array : (512M + 16,384K)bit x 8bit - Data Register : (2K + 64)bit x 8bit

* Automatic Program and Erase - Page Program : (2K + 64)Byte - Block Erase : (128K + 4K)Byte

* Page Read Operation - Page Size : (2K

K9K8G08U0M General Description

Offered in 512Mx8bit, the K9F4G08U0M is a 4G-bit NAND Flash Memory with spare 128M-bit. Its NAND cell provides the most costeffective solution for the solid state application market. A program operation can be performed in typical 200µs on the (2K+64)Byte page and an erase operation can be performed.

K9K8G08U0M Datasheet (1.43 MB)

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K9K8G08U0M

Manufacturer:

Samsung semiconductor

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1.43 MB

Description:

1g x 8 bit / 2g x 8 bit nand flash memory.
www.DataSheet4U.com K9K8G08U1M K9F4G08U0M Advance FLASH MEMORY Document Title 512M x 8 Bits / 1G x 8 Bits NAND Flash Memory Revision History Revisi.

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K9K8G08U0M Bit Bit NAND Flash Memory Samsung semiconductor

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K9K8G08U0M Features

K9K8G08U0M General Description

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