K9MDG08U5D Datasheet - Samsung semiconductor

4G x 8 Bit/ 8G x 8 Bit/ 16G x 8 Bit NAND Flash Memory

K9MDG08U5D Features

* Voltage Supply - 3.3V Device : 2.7V ~ 3.6V

* Organization - Memory Cell Array : (2G + 109M) x 8bit - Data Register : (4K + 218) x 8bit

* Automatic Program and Erase - Page Program : (4K + 218)Byte - Block Erase : (512K + 27.25K)Byte

* Page Read Operation - Page Size

K9MDG08U5D General Description

Offered in 4Gx8bit, the K9LBG08U0D is a 32G-bit NAND Flash Memory with spare 1,744M-bit. The device is offered in 3.3V Vcc. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation can be performed in typical 800µs on the 4,314-byte page an.

K9MDG08U5D Datasheet (1.68 MB)

K9MDG08U5D Datasheet Preview — Preview of K9MDG08U5D PDF

Datasheet Details

Part number:

K9MDG08U5D

Manufacturer:

Samsung semiconductor

File Size:

1.68 MB

Description:

4g x 8 bit/ 8g x 8 bit/ 16g x 8 bit nand flash memory.
www.DataSheet.co.kr K9HCG08U1D K9PDG08U5D K9LBG08U0D K9MDG08U5D Preliminary FLASH MEMORY K9XXG08UXD INFORMATION IN THIS DOCUMENT IS PROVIDED IN RE.

📁 Related Datasheet

K9MDG08U5M FLASH MEMORY (Samsung Electronics)

K9MCG08U5M Flash Memory (Samsung Electronics)

K903 2SK903-MR (Fuji Electric)

K904 2SK904 (Fuji Semiconductors)

K91G08Q0M 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory (Samsung semiconductor)

K931 High Frequency Low Noise Amp (Sanyo Semiconductor)

K932 2SK932 (ON Semiconductor)

K9351M IF Filter (EPCOS)

K9352M IF Filter (EPCOS)

K9356M IF Filter (EPCOS)

TAGS

K9MDG08U5D Bit Bit 16G Bit NAND Flash Memory Samsung semiconductor

Image Gallery

K9MDG08U5D Features

K9MDG08U5D General Description

Datasheet Details

File Size:

Description:

K9MDG08U5D Distributor