K9T1G08U0M Datasheet - Samsung semiconductor

K9T1G08U0M 128M x 8 Bits NAND Flash Memory

Offered in 128Mx8bits, the K9T1G08U0M is 1Gbit with spare 32Mbit capacity. The device is offered in 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typical 200µs on the 528-bytes and an erase operation.

www.DataSheet4U.net K9T1G08U0M Document Title 128M x 8 Bits NAND Flash Memory FLASH MEMORY Preliminary Revision History Revision No. History 0.0 0.1 0.2 0.3 0.4 0.5 Draft Date Aug. 7th 2003 Oct. 20th 2003 Mar. 9th 2004 Apr. 24th 2004 May. 24th 2004 Oct. 25th 2004 Remark Advanced Preliminary Preliminary Preliminary Preliminary Preliminary Initial issue. tR is changed. [Old : 12µs(Max.), New :15µs(Max.)] CE must be held low during tR added. 1. Add the Protrusion/Burr value in WSOP1 PKG Diag.

K9T1G08U0M Features

* and specifications including FAQ, please refer to Samsung’s Flash web site. http://www.samsung.com/Products/Semiconductor/ The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will

K9T1G08U0M_Samsungsemiconductor.pdf