* Voltage Supply - 2.70V ~ 3.60V
* Organization - Memory Cell Array : (1G + 32M) x 8bit - Data Register : (2K + 64) x 8bit
* Automatic Program and Erase - Page Program : (2K + 64)Byte - Block Erase : (128K + 4K)Byte
* Page Read Operation - Page Size : (2K + 64)Byte -
K9WAG08U1M Datasheet (1.22 MB)
K9WAG08U1M
Samsung semiconductor
1.22 MB
(k9xxg08uxm) 1g x 8 bit / 2g x 8 bit nand flash memory.
K9WAG08U1M K9K8G08U0M K9NBG08U5M FLASH MEMORY K9XXG08UXM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT T.
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