K9WAG08U1M Overview
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K9WAG08U1M Key Features
- Voltage Supply
- 2.70V ~ 3.60V
- Organization
- Memory Cell Array : (1G + 32M) x 8bit
- Data Register : (2K + 64) x 8bit
- Automatic Program and Erase
- Page Program : (2K + 64)Byte
- Block Erase : (128K + 4K)Byte
- Page Read Operation
- Page Size : (2K + 64)Byte
K9WAG08U1M Applications
- Samsung Electronics reserves the right to change products or specification without notice
