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K9WAG08U1M Datasheet, Samsung semiconductor

K9WAG08U1M Datasheet, Samsung semiconductor

K9WAG08U1M

datasheet Download (Size : 1.22MB)

K9WAG08U1M Datasheet

K9WAG08U1M memory equivalent, (k9xxg08uxm) 1g x 8 bit / 2g x 8 bit nand flash memory.

K9WAG08U1M

datasheet Download (Size : 1.22MB)

K9WAG08U1M Datasheet

Features and benefits


* Voltage Supply - 2.70V ~ 3.60V
* Organization - Memory Cell Array : (1G + 32M) x 8bit - Data Register : (2K + 64) x 8bit
* Automatic Program and Erase - Pag.

Application

where Product failure could result in loss of life or personal or physical harm, or any military or defense application,.

Description

Offered in 1G x 8bit, the K9K8G08U0M is a 8G-bit NAND Flash Memory with spare 256M-bit. Its NAND cell provides the most costeffective solution for the solid state application market. A program operation can be performed in typical 200µs on the (2K+64.

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TAGS

K9WAG08U1M
K9xxG08UxM
Bit
Bit
NAND
Flash
Memory
Samsung semiconductor

Manufacturer


Samsung semiconductor

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