Datasheet4U Logo Datasheet4U.com

KBY00U00VA-B450 - 8Gb DDP (512M x16) NAND Flash + 4Gb (64M x32 + 64M x32) 2/CS

Description

The KBY00U00VA is a Multi Chip Package Memory which combines 8Gbit DDP Nand Flash Memory(organized with two pieces of 4Gbit Nand Flash Memory) and 4Gbit DDR synchronous high data rate Dynamic RAM(organized with two pieces of 2Gbit Mobile DDR SDRAM).

Features

  • Operating Temperature : -25°C ~ 85°C.
  • Package : 137 FBGA Type - 10.5mmx13mmx1.2mmt, 0.8mm pitch.
  • Voltage Supply - 1.8V Device : 1.7V ~ 1.95V.
  • Organization - Memory Cell Array : (256M + 8M) x 16bit for 4Gb (512M + 16M) x 16bit for 8Gb DDP - Data Register : (2K + 64) x 16bit.
  • Automatic Program and Erase - Page Program : (2K + 64)Word - Block Erase : (128K + 4K)Word.
  • Page Read Operation - Page Size : (2K + 64)Word - Random.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer

Other Datasheets by Samsung Semiconductor

Part Number Description

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Rev. 1.0, Jul. 2010 KBY00U00VA-B450 MCP Specification 8Gb DDP (512M x16) NAND Flash + 4Gb (64M x32 + 64M x32) 2/CS,2CKE DDP Mobile DDR SDRAM datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed herein is provided on an "AS IS" basis, without warranties of any kind. This document and all information discussed herein remain the sole and exclusive property of Samsung Electronics. No license of any patent, copyright, mask work, trademark or any other intellectual property right is granted by one party to the other party under this document, by implication, estoppel or otherwise.
Published: |