KBY00U00VA-B450 - 8Gb DDP (512M x16) NAND Flash + 4Gb (64M x32 + 64M x32) 2/CS

Samsung semiconductor

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Datasheet Details

Part number	KBY00U00VA-B450
Manufacturer	Samsung semiconductor
File Size	1.78 MB
Description	8Gb DDP (512M x16) NAND Flash + 4Gb (64M x32 + 64M x32) 2/CS
Datasheet	KBY00U00VA-B450_Samsungsemiconductor.pdf

KBY00U00VA-B450 Product details

Description

The KBY00U00VA is a Multi Chip Package Memory which combines 8Gbit DDP Nand Flash Memory(organized with two pieces of 4Gbit Nand Flash Memory) and 4Gbit DDR synchronous high data rate Dynamic RAM(organized with two pieces of 2Gbit Mobile DDR SDRAM).

Features

Operating Temperature : -25°C ~ 85°C.
Package : 137 FBGA Type - 10.5mmx13mmx1.2mmt, 0.8mm pitch.
Voltage Supply - 1.8V Device : 1.7V ~ 1.95V.
Organization - Memory Cell Array : (256M + 8M) x 16bit for 4Gb (512M + 16M) x 16bit for 8Gb DDP - Data Register : (2K + 64) x 16bit.
Automatic Program and Erase - Page Program : (2K + 64)Word - Block Erase : (128K + 4K)Word.
Page Read Operation - Page Size : (2K + 64)Word - Random.

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Published: Apr 25, 2011 |