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KFG5616U1M-DIB Datasheet OneNAND256 FLASH MEMORY

Manufacturer: Samsung Semiconductor

Download the KFG5616U1M-DIB datasheet PDF. This datasheet also includes the KFG5616Q1M-DEB variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (KFG5616Q1M-DEB_Samsungsemiconductor.pdf) that lists specifications for multiple related part numbers.

General Description

is revised.

3.

Changed Read while Load and Write While Program diagram.

Overview

OneNAND256 FLASH MEMORY www.DataSheet4U.com OneNAND SPECIFICATION Product OneNAND256 Part No.

KFG5616Q1M-DEB KFG5616D1M-DEB KFG5616U1M-DIB VCC(core & IO) 1.8V(1.7V~1.95V) 2.65V(2.4V~2.9V) 3.3V(2.7V~3.6V) Temperature Extended Extended Industrial PKG 63FBGA(LF)/48TSOP1 63FBGA(LF)/48TSOP1 63FBGA(LF)/48TSOP1 Version: Ver.

1.2 Date: June 15th, 2005 1 OneNAND256 FLASH MEMORY www.DataSheet4U.com INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.

Key Features

  • Design Technology: 0.12µm.
  • Voltage Supply - 1.8V device(KFG5616Q1M) : 1.7V~1.95V - 2.65V device(KFG5616D1M) : 2.4V~2.9V - 3.3V device(KFG5616U1M) : 2.7V~3.6V.
  • Organization - Host Interface:16bit.
  • Internal BufferRAM(3K Bytes) - 1KB for BootRAM, 2KB for DataRAM.
  • NAND Array - Page Size : (1K+32)bytes - Block Size : (64K+2K)bytes FLASH MEMORY www. DataSheet4U. com.
  • Architecture.
  • Performance.
  • Host Interface type - Synchronous B.

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