KM29U64000T, KM29U64000IT Datasheet - Samsung semiconductor

KM29U64000T 8M x 8 Bit NAND Flash Memory

The KM29U64000 is a 8M(8,388,608)x8bit NAND Flash Memory with a spare 256K(262,144)x8bit. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation programs the 528-byte page in typically 200 µs and an erase operation can be performed in typ.

KM29U64000T, KM29U64000IT Document Title 8M x 8 Bit NAND Flash Memory FLASH MEMORY Revision History Revision No. History 0.0 1.0 1.1 Initial issue. Data Sheet, 1998 Data Sheet. 1999 1) Added CE don’ t care mode during the data-loading and reading Draft Date April 10th 1998 July 14th 1998 April 10th 1999 Remark Preliminary Final Final The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG.

KM29U64000T Features

* Voltage Supply : 2.7V ~ 3.6V

* Organization - Memory Cell Array : (8M + 256K)bit x 8bit - Data Register : (512 + 16)bit x8bit

* Automatic Program and Erase - Page Program : (512 + 16)Byte - Block Erase : (8K + 256)Byte

* 528-Byte Page Read Operation - Random Access

KM29U64000IT_Samsungsemiconductor.pdf