KM29U64000T Datasheet - Samsung semiconductor

8M x 8 Bit NAND Flash Memory

KM29U64000T Features

* Voltage Supply : 2.7V ~ 3.6V

* Organization - Memory Cell Array : (8M + 256K)bit x 8bit - Data Register : (512 + 16)bit x8bit

* Automatic Program and Erase - Page Program : (512 + 16)Byte - Block Erase : (8K + 256)Byte

* 528-Byte Page Read Operation - Random Access

KM29U64000T General Description

The KM29U64000 is a 8M(8,388,608)x8bit NAND Flash Memory with a spare 256K(262,144)x8bit. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation programs the 528-byte page in typically 200 µs and an erase operation can be performed in typ.

KM29U64000T Datasheet (481.39 KB)

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Part number:

KM29U64000T

Manufacturer:

Samsung semiconductor

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481.39 KB

Description:

8m x 8 bit nand flash memory.
KM29U64000T, KM29U64000IT Document Title 8M x 8 Bit NAND Flash Memory FLASH MEMORY Revision History Revision No. History 0.0 1.0 1.1 Initial issue. .

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KM29U64000T Bit NAND Flash Memory Samsung semiconductor

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KM29U64000T Features

KM29U64000T General Description

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