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MR18R326GAG0 Datasheet, Samsung semiconductor

MR18R326GAG0 a-die equivalent, (32mx18) 16pcs rimm module based on 576mb a-die.

MR18R326GAG0 Avg. rating / M : 1.0 rating-16

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MR18R326GAG0 Datasheet

Features and benefits


* High speed up to 1066 MHz RDRAM storage
* 184 edge connector pads with 1mm pad spacing
* Module PCB size : 133.35mm x 34.93mm x 1.27mm
* Each RDRAM devi.

Application

including computer memory, personal computers, workstations and other applications where high bandwidth and low latency .

Description

Signal Pins A1, A3, A5, A7, A9, A11, A13, A15, A17, A19, A21, A23, A25, A27, A29, A31, A33, A39, A52, A60, A62, A64, A66, A68, A70, A72, A74, A76, A78, A80, A82, A84, A86, A88, A90, A92, B1, B3, B5, B7, B9, B11, B13, B15, B17, B19, B21, B23, B25, B27.

Image gallery

MR18R326GAG0 Page 1 MR18R326GAG0 Page 2 MR18R326GAG0 Page 3

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