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Samwin

SWP75N75 Datasheet Preview

SWP75N75 Datasheet

N-channel Enhanced mode TO-220 MOSFET

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SW75N75
Features
High ruggedness
Low RDS(ON) (Typ 6m)@VGS=10V
Low Gate Charge (Typ 126nC)
Improved dv/dt Capability
100% Avalanche Tested
ApplicationSynchronous Rectification,
Li Battery Protect Board, DC-DC
N-channel Enhanced mode TO-220 MOSFET
TO-220
12
3
1. Gate 2. Drain 3. Source
BVDSS : 75V
ID : 75A
RDS(ON) : 6m
2
1
General Description
This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics.
3
Order Codes
Item Sales Type
1 SW P 75N75
Marking
SW 75N75
Package
TO-220
Packaging
TUBE
Absolute maximum ratings
Symbol
VDSS
ID
IDM
VGS
EAS
EAR
dv/dt
PD
TSTG, TJ
TL
Parameter
Drain to source voltage
Continuous drain current (@TC=25oC)
Continuous drain current (@TC=100oC)
Drain current pulsed
(note 1)
Gate to source voltage
Single pulsed avalanche energy
(note 2)
Repetitive avalanche energy
(note 1)
Peak diode recovery dv/dt
(note 3)
Total power dissipation (@TC=25oC)
Derating factor above 25oC
Operating junction temperature & storage temperature
Maximum lead temperature for soldering
purpose, 1/8 from case for 5 seconds.
*. Drain current is limited by junction temperature.
Thermal characteristics
Symbol
Parameter
Rthjc Thermal resistance, Junction to case
Rthja Thermal resistance, Junction to ambient
Value
75
75*
47.3*
28
±30
1004
45
7
312
2.5
-55 ~ + 150
300
Value
0.4
60
Unit
V
A
A
A
V
mJ
mJ
V/ns
W
W/oC
oC
oC
Unit
oC/W
oC/W
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Oct. 2015. Rev. 4.0
1/6




Samwin

SWP75N75 Datasheet Preview

SWP75N75 Datasheet

N-channel Enhanced mode TO-220 MOSFET

No Preview Available !

SW75N75
Electrical characteristic ( TC = 25oC unless otherwise specified )
Symbol
Parameter
Test conditions
Off characteristics
BVDSS Drain to source breakdown voltage
VGS=0V, ID=250uA
ΔBVDSS Breakdown voltage temperature
/ ΔTJ coefficient
ID=250uA, referenced to 25oC
IDSS Drain to source leakage current
Gate to source leakage current, forward
IGSS
Gate to source leakage current, reverse
On characteristics
VGS(TH)
RDS(ON)
Gfs
Gate threshold voltage
Drain to source on state resistance
Forward transconductance
Dynamic characteristics
Ciss Input capacitance
Coss Output capacitance
Crss Reverse transfer capacitance
td(on) Turn on delay time
tr Rising time
td(off) Turn off delay time
tf Fall time
Qg Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
VDS=75V, VGS=0V
VDS=60V, TC=125oC
VGS=20V, VDS=0V
VGS=-20V, VDS=0V
VDS=VGS, ID=250uA
VGS=10V, ID = 37.5A
VDS = 40 V, ID = 37.5 A
VGS=0V, VDS=25V, f=1MHz
VDS=60V, ID=75A, VGS=10V,
RG=25Ω
(note 4,5)
VDS=37.5V, VGS=10V, ID=75A
(note 4,5)
Min.
75
2.0
Typ. Max. Unit
V
0.07
V/oC
1
20
100
-100
uA
uA
nA
nA
4.0 V
6 8 m
21 S
960
110 pF
15
37
67
ns
72
30
126
46 nC
47
Source to drain diode ratings characteristics
Symbol
Parameter
Test conditions
IS Continuous source current
ISM Pulsed source current
Integral reverse p-n Junction
diode in the MOSFET
VSD Diode forward voltage drop.
IS=75A, VGS=0V
trr Reverse recovery time
Qrr Reverse recovery charge
IS=75A, VGS=0V,
dIF/dt=100A/us
. Notes
1. Repeatitive rating : pulse width limited by junction temperature.
2. L = 0.36mH, IAS = 75A, VDD = 50V, RG=25Ω, Starting TJ = 25oC
3. ISD ≤ 75A, di/dt = 100A/us, VDD ≤ BVDSS, Staring TJ =25oC
4. Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2%
5. Essentially independent of operating temperature.
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Min. Typ. Max. Unit
75 A
300 A
1.4 V
36.5 ns
52 nC
Oct. 2015. Rev. 4.0
2/6


Part Number SWP75N75
Description N-channel Enhanced mode TO-220 MOSFET
Maker Samwin
Total Page 6 Pages
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