Features
150℃ TJ operation.
Center tap configuration.
Low forward voltage drop.
High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance.
High frequency operation.
Guard ring for enhanced ruggedness and long term
reliability.
This is a Pb.
Free Device.
All SMC parts are traceable to the wafer lot.
Additional testing can be offered upon request.
Datasheet Details
Part number
MBRD835
Manufacturer
Sangdest Microelectronics
File Size
749.44 KB
Description
SCHOTTKY RECTIFIER
Datasheet
MBRD835 Datasheet
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Full PDF Text Transcription (Reference)
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Technical Data Data Sheet N0626, Rev.
Published:
Feb 21, 2018
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