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2SC3678
Silicon NPN Triple Diffused Planar Transistor (High Voltage Switching Transistor) Application : Switching Regulator and General Purpose
sAbsolute maximum ratings (Ta=25°C) sElectrical Characteristics
(Ta=25°C) External Dimensions MT-100(TO3P)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg
2SC3678 900 800 7
3(Pulse6) 1.5
80(Tc=25°C) 150
–55 to +150
Unit V V V A A W °C °C
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB
Conditions VCB=800V
VEB=7V IC=10mA VCE=4V, IC=1A IC=1A, IB=0.2A IC=1A, IB=0.2A VCE=12V, IE=–0.3A VCB=10V, f=1MHz
2SC3678 100max 100max 800min 10 to 30 0.5max 1.2max 6typ 50typ
Unit µA µA V
V V MHz pF
20.0min 4.0max
19.9±0.3 4.0 2.0
1.8 5.0±0.2
15.6±0.4 9.6
4.8±0.2 2.0±0.1
a ø3.2±0.1 b
2
3
1.05
+0.2 -0.1
0.65
+0.2 -0.
C3678 Datasheet
