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CTNS-6603S - Fast Recovery and High Power Diode

Key Features

  • The CTNS-6603S is a high power diode of the low-noise and low loss which realize a peak reverse voltage of 300 V. Typical forward voltage drop of 0.95 V is realized by optimizing the relationship of trade-off between VF and trr. It has the characteristics suit for PFC circuit of DCM and CCM. The low thermal resistance package achieves high performance in terms of heat dissipation.
  • VRM------------------------------------------------------ 300 V.
  • VF------------------------------------ 1.

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Datasheet Details

Part number CTNS-6603S
Manufacturer Sanken
File Size 542.92 KB
Description Fast Recovery and High Power Diode
Datasheet download datasheet CTNS-6603S Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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VRM = 300 V, IF(AV) = 60 A, trr = 100 ns(max.) Fast Recovery and High Power Diode CTNS-6603S Features The CTNS-6603S is a high power diode of the low-noise and low loss which realize a peak reverse voltage of 300 V. Typical forward voltage drop of 0.95 V is realized by optimizing the relationship of trade-off between VF and trr. It has the characteristics suit for PFC circuit of DCM and CCM. The low thermal resistance package achieves high performance in terms of heat dissipation.  VRM------------------------------------------------------ 300 V  VF------------------------------------ 1.2 V max. (IF = 30 A)  IF(AV)------------------------------------------------------- 60 A  trr-------------------------------------------------- 100 ns max. (IF = 500 mA, IRP = 500 mA, 90 % of R.P.