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Sanken

FKI06269 Datasheet Preview

FKI06269 Datasheet

Power MOSFET

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60 V, 24 A, 17.2 mΩ Low RDS(ON)
N ch Trench Power MOSFET
FKI06269
Features
V(BR)DSS --------------------------------- 60 V (ID = 100 µA)
ID ---------------------------------------------------------- 24 A
RDS(ON) -------- 22.6 mΩ max. (VGS = 10 V, ID = 15.8 A)
Qg------- 6.6 nC (VGS = 4.5 V, VDS = 30 V, ID = 15.8 A)
Package
TO-220F
Low Total Gate Charge
High Speed Switching
Low On-Resistance
Capable of 4.5 V Gate Drive
100 % UIL Tested
RoHS Compliant
Applications
DC-DC converters
Synchronous Rectification
(1) (2) (3)
s G D S
Design Equivalent circuit
Not to scale
or New Power Supplies
D(2)
G(1)
S(3)
ded f Absolute Maximum Ratings
n Unless otherwise specified, TA = 25 °C
e Parameter
Symbol
m Drain to Source Voltage
VDS
m Gate to Source Voltage
VGS
o Continuous Drain Current
ID
ec Pulsed Drain Current
IDM
R Continuous Source Current
(Body Diode)
IS
t Pulsed Source Current
No (Body Diode)
ISM
Test conditions
TC = 25 °C
PW 100µs
Duty cycle 1 %
PW ≤ 100µs
Duty cycle ≤ 1 %
VDD = 30 V, L = 1 mH,
Rating
60
± 20
24
47
24
47
Unit
V
V
A
A
A
A
Single Pulse Avalanche Energy
EAS
IAS = 4.2 A, unclamped,
RG = 4.7 Ω
18
mJ
Refer to Figure 1
Avalanche Current
IAS
10
A
Power Dissipation
PD
TC = 25 °C
29
W
Operating Junction Temperature
TJ
150
°C
Storage Temperature Range
TSTG
55 to 150
°C
FKI06269-DS Rev.1.3
SANKEN ELECTRIC CO.,LTD.
1
May. 29, 2014
http://www.sanken-ele.co.jp




Sanken

FKI06269 Datasheet Preview

FKI06269 Datasheet

Power MOSFET

No Preview Available !

FKI06269
Thermal Characteristics
Unless otherwise specified, TA = 25 °C
Parameter
Symbol
Thermal Resistance
(Junction to Case)
RθJC
Thermal Resistance
(Junction to Ambient)
RθJA
Test Conditions
Min. Typ. Max. Unit
4.3 °C/W
62.5 °C/W
Electrical Characteristics
Unless otherwise specified, TA = 25 °C
Parameter
Drain to Source Breakdown
Voltage
Drain to Source Leakage Current
Gate to Source Leakage Current
Gate Threshold Voltage
Symbol
V(BR)DSS
IDSS
IGSS
VGS(th)
Test Conditions
ID = 100 μA, VGS = 0 V
VDS = 60 V, VGS = 0 V
VGS = ± 20 V
VDS = VGS, ID = 250 µA
Min.
60
1.0
Typ. Max. Unit
s
V
ign
100
µA
s
± 100 nA
De2.0
2.5
V
Static Drain to Source
w On-Resistance
ID = 15.8 A, VGS = 10 V
RDS(ON)
ID = 7.9 A, VGS = 4.5 V
e Gate Resistance
RG
f = 1 MHz
N Input Capacitance
Ciss
VDS = 25 V
r Output Capacitance
Coss
VGS = 0 V
o f = 1 MHz
f Reverse Transfer Capacitance
Crss
d Total Gate Charge (VGS = 10 V)
Qg1
e Total Gate Charge (VGS = 4.5 V)
Qg2
VDS = 30 V
d Gate to Source Charge
Qgs
ID = 15.8 A
en Gate to Drain Charge
Qgd
Turn-On Delay Time
m Rise Time
m Turn-Off Delay Time
co Fall Time
e Source to Drain Diode Forward
R Voltage
Source to Drain Diode Reverse
t Recovery Time
o Source to Drain Diode Reverse
N Recovery Charge
td(on)
tr
VDS = 30 V
ID = 15.8 A
td(off)
VGS = 10 V, RG = 4.7 Ω
Refer to Figure 2
tf
VSD
IS = 15.8 A, VGS = 0 V
trr
IF = 15.8 A
di/dt = 100 A/µs
Qrr
Refer to Figure 3
17.2
21.1
3.0
1050
125
53
14.7
6.6
2.2
2.1
1.9
2.3
10.9
5.0
0.9
28.7
32.3
22.6
27.6
1.5
Ω
pF
nC
ns
V
ns
nC
FKI06269-DS Rev.1.3
SANKEN ELECTRIC CO.,LTD.
2
May. 29, 2014


Part Number FKI06269
Description Power MOSFET
Maker Sanken
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FKI06269 Datasheet PDF






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