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Sanken

FKI07076 Datasheet Preview

FKI07076 Datasheet

Power MOSFET

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75 V, 55 A, 5.3 mΩ Low RDS(ON)
N ch Trench Power MOSFET
FKI07076
Features
V(BR)DSS --------------------------------- 75 V (ID = 100 µA)
ID ---------------------------------------------------------- 55 A
RDS(ON) ----------6.9 mΩ max. (VGS = 10 V, ID = 44.0 A)
Qg------42.9 nC (VGS = 4.5 V, VDS = 38 V, ID = 44.0 A)
Package
TO-220F
Low Total Gate Charge
High Speed Switching
Low On-Resistance
Capable of 4.5 V Gate Drive
100 % UIL Tested
RoHS Compliant
Applications
DC-DC converters
Synchronous Rectification
(1) (2) (3)
s G D S
Design Equivalent circuit
Not to scale
or New Power Supplies
D(2)
G(1)
S(3)
ded f Absolute Maximum Ratings
n Unless otherwise specified, TA = 25 °C
e Parameter
Symbol
m Drain to Source Voltage
VDS
m Gate to Source Voltage
VGS
o Continuous Drain Current
ID
ec Pulsed Drain Current
IDM
R Continuous Source Current
(Body Diode)
IS
t Pulsed Source Current
No (Body Diode)
ISM
Test conditions
TC = 25 °C
PW 100µs
Duty cycle 1 %
PW ≤ 100µs
Duty cycle ≤ 1 %
VDD = 38 V, L = 1 mH,
Rating
75
± 20
55
110
55
110
Unit
V
V
A
A
A
A
Single Pulse Avalanche Energy
EAS
IAS = 13 A, unclamped,
RG = 4.7 Ω
170
mJ
Refer to Figure 1
Avalanche Current
IAS
30
A
Power Dissipation
PD
TC = 25 °C
42
W
Operating Junction Temperature
TJ
150
°C
Storage Temperature Range
TSTG
55 to 150
°C
FKI07076-DS Rev.1.3
SANKEN ELECTRIC CO.,LTD.
1
May. 29, 2014
http://www.sanken-ele.co.jp




Sanken

FKI07076 Datasheet Preview

FKI07076 Datasheet

Power MOSFET

No Preview Available !

FKI07076
Thermal Characteristics
Unless otherwise specified, TA = 25 °C
Parameter
Symbol
Thermal Resistance
(Junction to Case)
RθJC
Thermal Resistance
(Junction to Ambient)
RθJA
Test Conditions
Min. Typ. Max. Unit
3.0 °C/W
62.5 °C/W
Electrical Characteristics
Unless otherwise specified, TA = 25 °C
Parameter
Drain to Source Breakdown
Voltage
Drain to Source Leakage Current
Gate to Source Leakage Current
Gate Threshold Voltage
Symbol
V(BR)DSS
IDSS
IGSS
VGS(th)
Test Conditions
ID = 100 μA, VGS = 0 V
VDS = 75 V, VGS = 0 V
VGS = ± 20 V
VDS = VGS, ID = 1.5 mA
Min.
75
1.0
Typ. Max. Unit
s
V
ign
100
µA
s
± 100 nA
De2.0
2.5
V
Static Drain to Source
w On-Resistance
ID = 44.0 A, VGS = 10 V
RDS(ON)
ID = 22.0 A, VGS = 4.5 V
e Gate Resistance
RG
f = 1 MHz
N Input Capacitance
Ciss
VDS = 25 V
r Output Capacitance
Coss
VGS = 0 V
o f = 1 MHz
f Reverse Transfer Capacitance
Crss
d Total Gate Charge (VGS = 10 V)
Qg1
e Total Gate Charge (VGS = 4.5 V)
Qg2
VDS = 38 V
d Gate to Source Charge
Qgs
ID = 44.0 A
en Gate to Drain Charge
Qgd
Turn-On Delay Time
m Rise Time
m Turn-Off Delay Time
co Fall Time
e Source to Drain Diode Forward
R Voltage
Source to Drain Diode Reverse
t Recovery Time
o Source to Drain Diode Reverse
N Recovery Charge
td(on)
tr
VDS = 38 V
ID = 44.0 A
td(off)
VGS = 10 V, RG = 4.7 Ω
Refer to Figure 2
tf
VSD
IS = 44.0 A, VGS = 0 V
trr
IF = 44.0 A
di/dt = 100 A/µs
Qrr
Refer to Figure 3
5.3
6.0
0.8
6340
575
365
91.6
42.9
16.5
12.4
10.7
10.1
49.1
21.0
0.9
48.4
75.7
6.9
7.6
1.5
Ω
pF
nC
ns
V
ns
nC
FKI07076-DS Rev.1.3
SANKEN ELECTRIC CO.,LTD.
2
May. 29, 2014


Part Number FKI07076
Description Power MOSFET
Maker Sanken
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FKI07076 Datasheet PDF






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