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FMNS-4606S Datasheet Preview

FMNS-4606S Datasheet

Fast Recovery Diode

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VRM = 600 V, IF(AV) = 60 A, trr = 100 ns
Fast Recovery Diode
FMNS-4606S
Data Sheet
Description
The FMNS-4606S is a 600 V, 60 A, fast recovery
diode. The maximum VF of 1.3 V and the maximum trr
of 100 ns (IF : IRP = 1 : 2) are realized by optimizing the
trade-off relationship between VF and trr. The low
thermal resistance package achieves high performance in
terms of heat dissipation.
Features
VRM------------------------------------------------------ 600 V
IF(AV)------------------------------------------------------- 60 A
VF--------------------------------------------------------- 1.3 V
trr1 (IF = IRP) -------------------------------------------- 150 ns
Bare Lead Frame: Pb-free (RoHS Compliant)
Flammability: Equivalent to UL94V-0
Applications
PFC Crcuit
Inverter Circuit
Secondary-side Rectifier Diode
(Flyback Converter, LLC Converter, etc.)
Freewheel Diode
(Offline Buck Converter, Offline Buck-boost
Converter, etc.)
Package
TO3PF-3L
(1)
(1) (2)(3)
(3)
(1) Anode
(2) Cathode
(3) Anode
(2)
Not to scale
FMNS-4606S-DSE Rev.1.3
SANKEN ELECTRIC CO., LTD.
1
Feb. 04, 2020
https://www.sanken-ele.co.jp/en
© SANKEN ELECTRIC CO., LTD. 2016




Sanken

FMNS-4606S Datasheet Preview

FMNS-4606S Datasheet

Fast Recovery Diode

No Preview Available !

FMNS-4606S
Absolute Maximum Ratings
Unless otherwise specified, TA = 25 °C.
Parameter
Symbol
Conditions
Rating
Unit
Nonrepetitive Peak Reverse Voltage
VRSM
600
V
Repetitive Peak Reverse Voltage
VRM
600
V
Average Forward Current
Surge Forward Current
I2t Limiting Value
IF(AV) See Figure 1 and Figure 2
60
A
IFSM
Half cycle sine wave,
positive side, 10 ms, 1 shot
200
A
I2t
1 ms t 10 ms
200
A2s
Junction Temperature
TJ
40 to 150
°C
Storage Temperature
TSTG
40 to 150
°C
Electrical Characteristics
Unless otherwise specified, TA = 25 °C.
Parameter
Symbol
Forward Voltage Drop (1)
VF
Reverse Leakage Current(1)
IR
Reverse Leakage Current
under High Temperature(1)
HIR
trr1
Reverse Recovery Time(1)
trr2
Thermal Resistance(2)
Rth(J-C)
Conditions
TJ = 25 °C, IF = 30 A
VR = VRM
VR = VRM, TJ = 150 °C
IF = IRP = 500 mA,
90% recovery point,
TJ = 25 °C
IF = 500 mA, IRP = 1 A,
75% recovery point,
TJ = 25 °C
Min. Typ. Max. Unit
1.3
V
200 µA
20 mA
150
ns
100
ns
1.7 °C/W
Mechanical Characteristics
Parameter
Heatsink Mounting Screw Torque
Conditions
Min. Typ. Max. Unit
0.686 0.882 N∙m
(1) The rating of one chip.
(2) Rth (J-C) is thermal resistance between junction and case.
FMNS-4606S-DSE Rev.1.3
SANKEN ELECTRIC CO., LTD.
2
Feb. 04, 2020
https://www.sanken-ele.co.jp/en
© SANKEN ELECTRIC CO., LTD. 2016


Part Number FMNS-4606S
Description Fast Recovery Diode
Maker Sanken
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