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FMXA-2102ST Datasheet Preview

FMXA-2102ST Datasheet

Ultrafast Recovery Diode

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Ultrafast Recovery Diode
FMXA-2102ST
March, 2006
General Description
A combination of a new lifetime control technology and a
thinner die realizes low power dissipation.
As a FRD for SW power supply secondary side rectification,
this device has optimal characteristics for a high frequency
rectification use.
Applications
PDP driver circuit.
An output rectifier for SMPS, UPS, DC-DC converter.
A Flywheel diode for the inverter and chopper.
Package—TO220F
Features
An excellent reverse recovery characteristic under high
temperature
An improved heat dissipation at a junction part thanks to a
thinner die
Die Structure: Silicon Planer Diode (FRD)
Key Specifications
Absolute maximum ratings
Parameter
Transient Peak Reverse Voltage
Symbol
VRSM
Unit
V
Peak Reverse Voltage
VRM
V
Average Forward Current
IF(AV)
A
Peak Surge Forward Current
IFSM
A
Rating
200
200
10
100
Electrical characteristics
Parameter
Symbol Unit Rating
Conditions
Forward Voltage Drop VF V 1.2 max. IF=5A
Reverse Leakage Current IR μA 100 max. VR=VRM
Reverse Leakage Current
Under High Temperature
H•IR
mA
20 max.
VR=VRM,
Tj=150°C
Reverse Recovery Time trr
ns
25 max.
IF=IRP=500mA
90%Recovery point
Sanken Electric Co.,Ltd.
http://www.sanken-ele.co.jp/en/
1/8
D01-008EA-060228




Sanken

FMXA-2102ST Datasheet Preview

FMXA-2102ST Datasheet

Ultrafast Recovery Diode

No Preview Available !

Ultrafast Recovery Diode
FMXA-2102ST
March, 2006
§1. Absolute Maximum Ratings and Electrical Characteristics
•Absolute Maximum Ratings
No. Item
1 Transient Peak Reverse Voltage
2 Peak Reverse Voltage
3 Average Forward Current
4 Peak Surge Forward Current
5 I2t Limiting Value
6 Junction Temperature
7 Storage Temperature
Symbol
VRSM
VRM
IF(AV)
IFSM
I2t
Tj
Tstg
Unit
V
V
A
A
A2S
°C
°C
Rating
200
200
10
100
50
-40 to +150
-40 to+150
Conditions
Refer to “§4 Derating”.
10msec. Half sine-wave, one shot
1msec t 10msec
• Electrical Characteristics
No. Item
Symbol
1 Forward Voltage Drop
VF
2 Reverse Leakage Current
IR
3
Reverse Leakage Current Under
High Temperature
H•IR
4 Reverse Recovery Time
trr
5 Thermal Resistance
Rth(j-c)
Unit
V
µA
mA
ns
°C/W
Rating
1.2 max.
100 max.
20 max.
25 max
4.0 max.
Conditions
IF=5A
VR=VRM
VR=VRM, Tj=150°C
IF=IRP=100mA
90% Recovery point
Between Junction and case
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.01
Transitional thermal resistance graph(Tj-Tc  Water-cooled fin)
TO-220F(200V10A) Comparison (typ)
Existing device
Thin dciheip
0.1
PowerTime[sec]
1
10
Sanken Electric Co.,Ltd.
2/8
D01-008EA-060228


Part Number FMXA-2102ST
Description Ultrafast Recovery Diode
Maker Sanken
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