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KGF65A6H - Trench Field Stop IGBT

General Description

The KGF65A6H and MGF65A6H are 650 V Field Stop IGBTs.

Sanken original trench structure decreases gate capacitance, and achieves high speed switching and switching loss reduction.

Thus, these Field Stop IGBTs can improve the efficiency of your circuit.

Key Features

  • Low Saturation Voltage.
  • High Speed Switching.
  • With Integrated Fast Recovery Diode.
  • RoHS Compliant.
  • VCE ------------------------------------------------------ 650 V.
  • IC (TC = 100 °C) ----------------------------------------- 60 A.
  • Short Circuit Withstand Time ----------------------- 10 μs.
  • VCE(sat)-----------------------------------------------1.9 V typ.
  • tf (TJ = 175 °C) ------------------------------------ 60 ns typ.
  • VF------------------------.

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Datasheet Details

Part number KGF65A6H
Manufacturer Sanken
File Size 636.73 KB
Description Trench Field Stop IGBT
Datasheet download datasheet KGF65A6H Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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VCE = 650 V, IC = 60 A Trench Field Stop IGBTs with Fast Recovery Diode KGF65A6H, MGF65A6H Data Sheet Description The KGF65A6H and MGF65A6H are 650 V Field Stop IGBTs. Sanken original trench structure decreases gate capacitance, and achieves high speed switching and switching loss reduction. Thus, these Field Stop IGBTs can improve the efficiency of your circuit. Features ● Low Saturation Voltage ● High Speed Switching ● With Integrated Fast Recovery Diode ● RoHS Compliant ● VCE ------------------------------------------------------ 650 V ● IC (TC = 100 °C) ----------------------------------------- 60 A ● Short Circuit Withstand Time ----------------------- 10 μs ● VCE(sat)-----------------------------------------------1.9 V typ.