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SHD4115 Datasheet Preview

SHD4115 Datasheet

Power MOSFET

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100 V, 10 A, 50
Power MOSFET Module
SHD4115
Data Sheet
Description
The SHD4115 includes four N-channel power
MOSFETs in its small HSON package. The internal
power MOSFETs have Zener diodes between gates and
sources, thus requiring no externally clamped circuit for
an injection coil drive circuit. Supplied in a low thermal
resistance package, the product achieves high
performance in heat dissipation. In addition, its HSON
package employs a wettable flank structure, with the pin
tips plated and the case resin around the pins grooved.
This achieves higher reliability in mounting.
Features
High Reliability Achieved
Automotive Requirements Satisfied
AEC-Q101 Qualified
Bare Lead Frame: Pb-free (RoHS Compliant)
Wettable Flank HSON Package
Case Resin around the Pins Grooved
Built-in Zener Diodes between Gates and Sources
Specifications (Q1 to Q4)
V(BR)DSS ------------------------------- 100 V (ID = 100 μA)
ID ------------------------------------------------------- 10 A
RDS(ON) --------------- 50 mΩ max. (ID = 5 A, VGS = 10 V)
Typical Application
Solenoid Injection System
Package
HSON-20
Not to scale
Internal Schematic Diagram
DD
14 13
DD
12 11
G 15
D 16
S 17
S 18
D 19
G 20
Q4
Q3
Q1
Q2
10 G
9D
8S
7S
6D
5G
SHD4111
D: Drain
S: Source
G: Gate
12
DD
34
DD
DC/DC
Control
SHD4115
Application
Injection Coil Driver Circuits
SHD4115-DSE Rev.1.0
SANKEN ELCTRIC CO., LTD.
1
Sep. 01, 2020
https://www.sanken-ele.co.jp/en
© SANKEN ELECTRIC CO., LTD. 2020




Sanken

SHD4115 Datasheet Preview

SHD4115 Datasheet

Power MOSFET

No Preview Available !

SHD4115
Absolute Maximum Ratings
Unless otherwise specified, TA = 25 °C.
Parameter
Symbol
Drain-to-Source Voltage
VDS
Gate-to-Source Voltage
VGS
Continuous Drain Current
ID
Pulsed Drain Current
IDM
Power Dissipation
PD
Avalanche Energy
EAS
Avalanche Current
Maximum Drain-to-Source dv/dt
Maximum Diode Recovery dv/dt
Maximum Diode Recovery di/dt
Junction Temperature
Storage Temperature
IAS
dv/dt1
dv/dt2
di/dt
TJ
TSTG
Conditions
TC = 25 °C
t 30 µs, duty cycle 1 %
TC = 25 °C, all power MSOFETs
operating; mounted on an FR4 board
(26 mm × 36 mm × 1.66 mm)
TC = 25 °C, all power MSOFETs;
with an infinite heatsink
Single pulse, VDD = 14 V,
L = 1.0 mH, ID = 10 A,
unclamped, RG = 50 Ω;
see Figure 16
VDD = 14 V, L = 1.08 mH,
ID = 10 A, unclamped, RG = 50 Ω;
see Figure 16
See Figure 17
See Figure 17
Rating
100
±20
10
30
1.7
80
62.5
10
0.6
5
100
150
55 to 150
Unit
V
V
A
A
W
W
mJ
A
V/ns
V/ns
A/µs
°C
°C
Thermal Resistance Characteristics
Parameter
Junction-to-Case Thermal
Resistance
Symbol
RθJC
Conditions
TC = 25 °C; with an infinite
heatsink
Min.
Typ.
Max.
6.25
Unit
°C/W
SHD4115-DSE Rev.1.0
SANKEN ELCTRIC CO., LTD.
2
Sep. 01, 2020
https://www.sanken-ele.co.jp/en
© SANKEN ELECTRIC CO., LTD. 2020


Part Number SHD4115
Description Power MOSFET
Maker Sanken
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SHD4115 Datasheet PDF






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