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SJPX-H3 Datasheet Preview

SJPX-H3 Datasheet

Fast Recovery Diode

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VRM = 300 V, IF(AV) = 2.0 A, trr = 30 ns
Fast Recovery Diode
SJPX-H3
Data Sheet
Description
The SJPX-H3 is a fast recovery diode of 300 V / 2.0
A. The maximum trr of 30 ns is realized by optimizing a
life-time control.
Features
VRM---------------------------------------------------- 300 V
IF(AV)---------------------------------------------------- 2.0 A
VF ------------------------------------------------------ 1.3 V
trr1------------------------------------------------------- 30 ns
Bare Lead Frame: Pb-free (RoHS Compliant)
Flammability: Equivalent to UL94V-0
Suitable for High Reliability and Automotive
Requirement.
Applications
White Goods
Audiovisual Equipment
Lighting Equipment
Industrial Electronic Equipment
(Communication Equipment and Factory Automation)
Secondary-side Rectifier Diode
(Flyback Converter, LLC Converter, etc.)
Freewheel Diode
(Offline Buck Converter, Offline Buck-boost
Converter, etc.)
Package
SJP
(1)
(1)
Cathode Mark
(2)
(2)
(1) Cathode
(2) Anode
Not to scale
SJPX-H3-DSE Rev.1.2
SANKEN ELECTRIC CO., LTD.
1
Mar. 09, 2021
https://www.sanken-ele.co.jp/en
© SANKEN ELECTRIC CO., LTD. 2008




Sanken

SJPX-H3 Datasheet Preview

SJPX-H3 Datasheet

Fast Recovery Diode

No Preview Available !

SJPX-H3
Absolute Maximum Ratings
Unless otherwise specified, TA = 25 °C.
Parameter
Symbol
Nonrepetitive Peak Reverse Voltage VRSM
Repetitive Peak Reverse Voltage
VRM
Average Forward Current
IF(AV)
Surge Forward Current
IFSM
I2t Limiting Value
I2t
Junction Temperature
TJ
Storage Temperature
TSTG
Conditions
See Figure 2 and Figure 3
Half cycle sine wave,
positive side, 10 ms, 1 shot
1 ms t 10 ms
Rating
Unit
300
V
300
V
2.0
A
20
A
2.0
A2s
40 to 150
°C
40 to 150
°C
Electrical Characteristics
Unless otherwise specified, TA = 25 °C.
Parameter
Symbol
Conditions
Min. Typ. Max. Unit
Forward Voltage Drop
TJ = 25 °C, IF = 2.0 A
VF
TJ = 100 °C, IF = 2.0 A
1.3
V
0.89
V
Reverse Leakage Current
Reverse Leakage Current
under High Temperature
Reverse Recovery Time
Thermal Resistance (1)
IR
VR = VRM
50
µA
HIR VR = VRM, TJ = 150 °C
3.0 mA
IF = IRP = 100 mA,
trr1 90% recovery point,
30
ns
TJ = 25 °C
IF = 100 mA, IRP = 200 mA,
trr2 75% recovery point,
25
ns
TJ = 25 °C
Rth(J-L)
20 °C/W
Mechanical Characteristics
Parameter
Package Weight
Conditions
TL
Device
TA
Min.
Typ.
Max.
Unit
0.072
g
2 mm
Copper Area
25 mm
2 mm
2 mm
Substrate
25 mm
Figure 1. Lead Temperature Measurement Conditions
(1) Rth (J-L) is thermal resistance between junction and lead. Lead temperature (TL) is measured near the root of pin.
SJPX-H3-DSE Rev.1.2
SANKEN ELECTRIC CO., LTD.
2
Mar. 09, 2021
https://www.sanken-ele.co.jp/en
© SANKEN ELECTRIC CO., LTD. 2008


Part Number SJPX-H3
Description Fast Recovery Diode
Maker Sanken
PDF Download

SJPX-H3 Datasheet PDF






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