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SLA4052 Datasheet Preview

SLA4052 Datasheet

NPN Darlington Transistor Array

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NPN Darlington Transistor Array
with Freewheeling Diode
SLA4052
Features
Built-in 9-elements NPN Darlington transistor
Built-in freewheeling diode
High DC current gain
VCE ------------------------------------------------------ 120 V
IC(DC) ------------------------------------------------------- 3 A
VCE(sat)-----------------------------------------------1.1 V typ.
hFE --------------------------------------------------- 5000 typ.
Package
SIP 21 with Fin (SLA-21pin)
Applications
Relay driver
Solenoid driver
Lamp driver
LED drive
(1)
Equivalent circuit
(21)
Not to scale
Absolute Maximum Ratings
Unless otherwise specified, TA = 25 °C
Parameter
Symbol
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
VCBO
VCEO
VEBO
IC(DC)
Collector Current (pulse)
IC (PULSE)
Base Current
IB
Diode Forward Current
IF
Diode Forward Current (pulse)
IFSM
Diode Reverse Voltage
VR
Maximum Allowable Power
Dissipation
PT
Junction Temperature
TJ
Storage Temperature
Tstg
Test conditions
PW 1ms
Duty cycle 50 %
PW 0.5ms
Duty cycle 25%
PW ≤ 10ms,
Single Pulse
No. Fin. TA=25°C
All Element Operation
TC=25°C
All Element Operation
Rating
Unit
120
V
120
V
6
V
3
A
5
A
0.2
A
3
A
5
A
120
V
5
W
25
W
150
°C
40 to 150
°C
SLA4052 - DS Rev.1.1
SANKEN ELECTRIC CO.,LTD.
1
Apr. 15, 2015
http://www.sanken-ele.co.jp




Sanken

SLA4052 Datasheet Preview

SLA4052 Datasheet

NPN Darlington Transistor Array

No Preview Available !

SLA4052
Electrical Characteristics
TA = 25 °C
Transistor
Parameter
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Voltage
Collector-Emitter Voltage
DC Current Transfer Ratio
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Emitter-Collector Diode Forward
Voltage
Turn-On Time
Storage Time
Fall Time
Output Capacitance
Symbol
ICBO
IEBO
VCEO
VCEO(SUS)
hFE
VCE (sat)
VBE(sat)
VFEC
ton
tstg
tf
Cob
Test Conditions
VCB = 120 V
VEB = 6V
IC = 25mA
IC = 1A
VCE = 4 V, IC = 1.5 A
IC = 1.5 A, IB = 3 mA
IC = 1.5 A, IB = 3 mA
IFEC = 1.5 A
VCC 30 V
IC = 1.5 A
IB = ± 3 mA
VCB = 10 V, f = 1 MHz
Flyback Diode
Parameter
Reverse Voltage
Forward Voltage
Reverse Current
Reverse Recovery Time
Symbol
VR
VF
IR
trr
Test Conditions
IR = 10 μA
IF = 1 A
VR = 120 V
IF = ± 100 mA
Min.
120
120
2000
Typ. Max. Unit
10
μA
10 mA
V
V
5000 15000
1.1
1.5
V
1.7
2.0
V
1.4
V
0.5
2.4
μs
1.0
30
pF
Min. Typ. Max. Unit
120
V
1.8
V
10 μA
100
ns
SLA4052 - DS Rev.1.1
SANKEN ELECTRIC CO.,LTD.
2
Apr. 15, 2015


Part Number SLA4052
Description NPN Darlington Transistor Array
Maker Sanken
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