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Sanken

STD03P Datasheet Preview

STD03P Datasheet

Darlington Transistor

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Darlington Transistor with built-in compensation diodes
STD03P
March, 2006
Features
High collector power dissipation: Pc=160W (with TO-3P)
Low internal impedance by means of thinner die structure
Built-in temperature compensation diode
Complementary to STD03N
Applications
Audio output
Package ---MT-105 (TO3P 5-pin)
Equivalent circuit
E(1)
(4)
B(5)
C(3)
Absolute maximum ratings
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Diode Forward Current
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Di VF
Tj
Tstg
(Ta= 25°C)
Rating
Unit
-160
V
-160
V
-5
V
-15
A
-1
A
160 (Tc= 25°C)
W
10
mA
150
°C
-55 to 150
°C
Sanken Electric Co.,Ltd.
http://www.sanken-ele.co.jp/en/
1/8
T01-002EA-060309




Sanken

STD03P Datasheet Preview

STD03P Datasheet

Darlington Transistor

No Preview Available !

Darlington Transistor with built-in compensation diodes
STD03P
March, 2006
Electrical characteristics
Parameter
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Voltage
DC Current Transfer Ratio
Collector-Emitter saturation Voltage
Base-Emitter saturation Voltage
Base-Emitter Voltage
Diode Forward Voltage
Symbol
Test Conditions
ICBO VCB=-160V
MIN.
(Ta= 25°C)
Limits
Unit
TYP. MAX.
-100
μA
IEBO VEB=-5V
-100 μA
VCEO IC=-30mA
-160
V
hFE * VCE=-4V, IC=-10A
5000
20000
VCE(sat) IC=-10A, IB=-10mA
-2.0
V
VBE(sat) IC=-10A, IB=-10mA
-2.5
V
VBE VCE=-20V,IC=-40mA
1200
mV
Di VF IF=2.5mA
1540
mV
* hFE rank: 5000 to 12000(O), 8000 to 20000(Y)
‹ When the transistors are used in pairs, the following conditions must to be satisfied: Total VF of Di Total
VBE of the transistors.
(The above measurement conditions shall be applied and ΔV=0 to 500mV.)
Sanken Electric Co.,Ltd.
2/8
T01-002EA-060309


Part Number STD03P
Description Darlington Transistor
Maker Sanken
PDF Download

STD03P Datasheet PDF






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