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SZ-10EF Datasheet Preview

SZ-10EF Datasheet

Schottky Diode

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VRM = 80 V, IF(AV) = 45 A
Schottky Diode
SZ-10EF
Data Sheet
Description
Package
The SZ-10EF is an 80 V, 45 A Schottky diode for
SZ-10
automotive, and has low leakage current and low forward
voltage drop. These characteristics provide high
efficiency rectification circuit. The low thermal resistance
(2)
package achieves high performance in terms of heat
dissipation.
Features
VRM------------------------------------------------------- 80 V
IF(AV)------------------------------------------------------ 45 A
VF (IF = 45 A)----------------------------------0.75 V (typ.)
HIR (TJ = 150 °C) ---------------------------------------- 50 mA (max.)
Repetitive Avalanche Power-------------------------3 kW
Bare Lead Frame: Pb-free (RoHS Compliant)
Flammability UL94V-0 (Equivalent)
Suitable for High Reliability and Automotive
Requrement
Anode Heatsink Package
(1)
(1)
(2)
(1) Cathode
(2) Anode
Not to scale
Applications
High speed switching applications as follows:
DC/DC Converter
Secondary Rectifier Circuit
Adapter
SZ-10EF-DSE Rev.1.3
SANKEN ELECTRIC CO., LTD.
1
Jan. 22, 2020
https://www.sanken-ele.co.jp/en/
© SANKEN ELECTRIC CO., LTD. 2016




Sanken

SZ-10EF Datasheet Preview

SZ-10EF Datasheet

Schottky Diode

No Preview Available !

SZ-10EF
Absolute Maximum Ratings
Unless specifically noted TA = 25 °C.
Parameter
Symbol
Conditions
Rating
Unit
Repetitive Peak Reverse Voltage
VRM
80
V
Average Forward Current
IF(AV)
t/T 1/4,
see Figure 3 and Figure 4.
45
A
Half cycle sine wave,
Surge Forward Current
IFSM
positive side, 10 ms, 1
300
A
shot
Repetitive Avalanche Power
PAR
tP = 10 μs,
see Figure 1
3
kW
Junction Temperature
TJ
40 to 150
°C
Storage Temperature
TSTG
40 to 150
°C
Electrical Characteristics
Unless specifically noted TA = 25 °C.
Parameter
Symbol
Forward Voltage Drop
VF
Reverse Leakage Current
Reverse Leakage Current
under High Temperature
Thermal Resistance(1)
IR
HIR
Rth(J-F)
Conditions
IF = 45 A
VR = VRM
VR = VRM, TJ = 150 °C
Min. Typ. Max. Unit
0.75 0.82
V
1
50
µA
10
50
mA
0 .4 0 0.65 °C/W
Avalanche
current
IP
0.5×IP
tP
0 10µs
time
Figure 1. Definition of Pulse Width, tP
TF
Figure 2. Frame Temperature Measurement Point
(1) Rth(J-F) is thermal resistance between junction and frame with infinite heatsink. Lead temperature is measured at anode
frame (see Figure 2).
SZ-10EF-DSE Rev.1.3
SANKEN ELECTRIC CO., LTD.
2
Jan. 22, 2020
https://www.sanken-ele.co.jp/en/
© SANKEN ELECTRIC CO., LTD. 2016


Part Number SZ-10EF
Description Schottky Diode
Maker Sanken
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SZ-10EF Datasheet PDF






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