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SZ-E10EF48 Datasheet Preview

SZ-E10EF48 Datasheet

Schottky Diode

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VRM = 80 V, IF(AV) = 45 A
Schottky Diode
SZ-E10EF48
Data Sheet
Description
Package
The SZ-E10EF48 is a 80 V, 45 A Schottky diode for
SZ-E10
automotive applications. The product achieves
characteristics such as low leakage current and low
forward voltage drop, thus providing a high-efficient
(2)
rectification circuit. Its low thermal resistance package
has excellent performance in heat dissipation.
Features
VRM------------------------------------------------------- 80 V
IF(AV)------------------------------------------------------ 45 A
VF (IF = 45 A)----------------------------------0.76 V (typ.)
HIR (TJ = 150 °C) ----------------------------------------50 mA (max.)
Avalanche Power --------------------------------------3 kW
Bare Lead Frame: Pb-free (RoHS Compliant)
Flammability: Equivalent to UL94V-0
Suitable for High Reliability and Automotive
Requirements
Anode Heatsink Package
(1)
(1)
(2)
(1) Cathode
(2) Anode
Not to scale
Applications
High speed switching applications such as:
DC/DC Converter
Adapter
Secondary Rectifier Circuit
SZ-E10EF48-DSE Rev.1.0
SANKEN ELECTRIC CO., LTD.
1
Sep. 11, 2020
https://www.sanken-ele.co.jp/en/
© SANKEN ELECTRIC CO., LTD. 2019




Sanken

SZ-E10EF48 Datasheet Preview

SZ-E10EF48 Datasheet

Schottky Diode

No Preview Available !

SZ-E10EF48
Absolute Maximum Ratings
Unless specifically noted, TA = 25 °C.
Parameter
Symbol
Repetitive Peak Reverse Voltage
VRM
Average Forward Current
IF(AV)
Surge Forward Current
IFSM
Avalanche Power
PA
Junction Temperature
TJ
Storage Temperature
TSTG
Conditions
t/T ≥ 1/4,
see Figure 3 and Figure 4.
Half cycle sine wave,
positive side, 10 ms, 1 shot
TJ = 25 °C;
tP = 10 μs (see Figure 1),
1 shot
Rating
Unit
80
V
45
A
300
A
3
kW
55 to 150
°C
55 to 150
°C
Electrical Characteristics
Unless specifically noted, TA = 25 °C.
Parameter
Symbol
Forward Voltage Drop
VF
Reverse Leakage Current
Reverse Leakage Current
under High Temperature
Thermal Resistance(1)
IR
HIR
Rth(J-L)
Conditions
IF = 45 A
VR = VRM
VR = VRM, TJ = 150 °C
Min. Typ. Max. Unit
0.76 0.82
V
50
µA
50 mA
0.50 °C/W
Mechanical Characteristics
Parameter
Package Weight
Conditions
Min. Typ. Max. Unit
2.6
g
Avalanche
Current
IP
0.5 × IP
tP
0 10 µs
time
Figure 1. Definition of Pulse Width, tP
TL
Figure 2. Lead Temperature Measurement Point
(1) Refers to thermal resistance between junction and lead with infinite heatsink. Lead temperature is measured at anode
lead (see Figure 2).
SZ-E10EF48-DSE Rev.1.0
SANKEN ELECTRIC CO., LTD.
2
Sep. 11, 2020
https://www.sanken-ele.co.jp/en/
© SANKEN ELECTRIC CO., LTD. 2019


Part Number SZ-E10EF48
Description Schottky Diode
Maker Sanken
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