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LAPT
sAbsolute maximum ratings
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SA1303 –150 –150 –5 –14 –3 125(Tc=25°C) 150 –55 to +150
2SA1303
Application : Audio and General Purpose
(Ta=25°C) 2SA1303 –100max –100max –150min 50min –2.0max 50typ 400typ V pF
20.0min 4.0max
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3284)
(Ta=25°C) Unit V V V A A W °C °C
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=–150V VEB=–5V IC=–25mA VCE=–4V, IC=–5A IC=–5A, IB=–0.5A VCE=–12V, IE=2A VCB=–10V, f=1MHz
External Dimensions MT-100(TO3P)
5.0±0.2 15.6±0.4 9.6 2.0 1.8 4.8±0.2 2.0±0.1
Unit
µA µA
V
19.9±0.3
4.0
a b
ø3.2±0.1
MHz
2 3 1.05 +0.2 -0.1 0.65 +0.2 -0.1 1.4
∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180)
5.45±0.
A1303 Datasheet
