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LAPT
2SA1386/1386A
Application : Audio and General Purpose
(Ta=25°C) 2SA1386 –100max VCB= IEBO V(BR)CEO hFE VCE(sat) fT COB VEB=–5V IC=–25mA VCE=–4V, IC=–5A IC=–5A, IB=–0.5A VCE=–12V, IE=2A VCB=–10V, f=1MHz –160 –160min 2SA1386A –100max –180 –100max –180min 50min∗ –2.0max 40typ 500typ V MHz pF
5.45±0.1 B C E 5.45±0.1 1.4 20.0min 4.0max 2 3 1.05 +0.2 -0.1 0.65 +0.2 -0.1
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3519/A) sAbsolute maximum ratings (Ta=25°C) sElectrical Characteristics
Symbol 2SA1386 2SA1386A VCBO VCEO VEBO IC IB PC Tj Tstg –160 –160 –5 –15 –4 130(Tc=25°C) 150 –55 to +150 –180 –180 Unit V V V A A W °C °C Symbol ICBO Conditions
External Dimensions MT-100(TO3P)
5.0±0.2 15.6±0.4 9.6 2.0 1.8 4.8±0.2 2.0±0.1
Unit
µA µA
V
19.9±0.3
V
4.0
a b
ø3.2±0.
A1386A Datasheet
