High hFE
2SC3852/3852ALOW VCE (sat)
Silicon NPN Epitaxial Planar Transistor
sAbsolute maximum ratings (Ta=25°C) sElectrical Characteristics
Symbol 2SC3852 2SC3852A Unit
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
80 100
60 80
6
3
1
25(Tc=25°C)
150
–55 to +150
V
V
V
A
A
W
°C
°C
Symbol
Conditions
ICBO
IEBO
V(BR)CEO
hFE
VCE(sat)
fT
COB
VCB=
VEB=6V
IC=25mA
VCE=4V, IC=0.5A
IC=2A, IB=50mA
VCE=12V, IE=–0.2A
VCB=10V, f=1MHz
sTypical Switching Characteristics (Common Emitter)
VCC
RL
IC
VBB1
VBB2
IB1
(V) (Ω) (A) (V) (V) (mA)
20 20 1.0 10 –5 15
IB2
(mA)
–30
Application : Driver for Solenoid and Motor, Series Regulator and General Purpose
(Ta=25°C) External Dimensions FM20(TO220F)
2SC3852 2SC3852A Unit
10max
80 100
100max
60min
80min
500min
0.5max
15typ
50typ
µA
V
µA
V
V
MHz
pF
ton
(µs)
0.8typ
tstg
(µs)
3.0typ
tf
(µs)
1.2typ
10.1±0.2
4.2±0.2
2.8 c0.5
ø3.3±0.2
a
b
1.35±0.15
1.35±0.15
2.54
0.85
+0.2
-0.1
2.54
0.45
+0.2
-0.1
2.2±0.2
2.4±0.2
BCE
Weight : Approx 2.0g
a. Type No.
b. Lot No.
I C– V CE Characteristics (Typical)
3
IB=12mA
8mA
5mA
2
3mA
2mA
1
1mA
0.5mA
0
01 2 34 5 6
Collector-Emitter Voltage VCE(V)
V CE( s a t ) – I B Characteristics (Typical)
1.0
1.0
0.5
0
0.001
2A
IC=1A
3A
0.005 0.01
0.05 0.1
Base Current IB(A)
0.5 1
I C– V BE Temperature Characteristics (Typical)
(VCE=4V)
3
2
1
0
0 0.5 1.0 1.1
Base-Emittor Voltage VBE(V)
h FE– I C Characteristics (Typical)
www.DataSheet4U.com
2000
(VCE=4V)
1000
500
Typ
h FE– I C Temperature Characteristics (Typical)
2000
(VCE=4V)
1000
125˚C
25˚C
500 –30˚C
θ j-a– t Characteristics
5
1
100
0.01
0.1 0.5
Collector Current IC(A)
1
100
3 0.01
0.1 0.5
Collector Current IC(A)
1
0.5
31
10 100
Time t(ms)
VCB=10V
IE=–2A
1000
f T– I E Characteristics (Typical)
(VCE=12V)
30
20
Typ
10
0
–0.005 –0.01
–0.05 –0.1
–0.5 –1
Emitter Current IE(A)
–2
Safe Operating Area (Single Pulse)
10
5
1
10m
00ms
s
DC
1
0.5
0.1
0.05
3
Without Heatsink
Natural Cooling
5 10
50
Collector-Emitter Voltage VCE(V)
100
Pc–Ta Derating
30
20
10
Without Heatsink
0
0 50 100
Ambient Temperature Ta(˚C)
150
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