C5287
C5287 is 2SC5287 manufactured by Sanken.
2SC5287
Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) s Absolute maximum ratings (Ta=25°C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC5287 900 550 7 5(Pulse10) 2.5 80(Tc=25°C) 150
- 55 to +150 Unit V V V A A W °C °C
Application : Switching Regulator and General Purpose
(Ta=25°C) 2SC5287 100max 100max 550min 10 to 25 0.5max 1.2max 6typ 50typ V MHz p F
5.45±0.1 B C E 20.0min 4.0max s Electrical Characteristics
Symbol ICBO IEBO V(BR)CEO h FE VCE(sat) VBE(sat) f T COB Conditions VCB=800V VEB=7V IC=10m A VCE=4V, IC=1.8A IC=1.8A, IB=0.36A IC=1.8A, IB=0.36A VCE=12V, IE=- 0.35A VCB=10V, f=1MHz
External Dimensions MT-100(TO3P)
5.0±0.2 15.6±0.4 9.6 2.0 1.8 4.8±0.2 2.0±0.1
Unit
µA µA
19.9±0.3
4.0 a b
ø3.2±0.1
2 3 1.05 +0.2 -0.1 5.45±0.1 0.65 +0.2 -0.1 1.4
.. s Typical Switching Characteristics (mon Emitter)
VCC (V) 250 RL (Ω) 139 IC (A) 1.8 VBB1 (V) 10 VBB2 (V)
- 5 IB1 (A) 0.27 IB2 (A)
- 0.9 ton (µs) 0.7max tstg (µs) 4.0max tf (µs) 0.5max
Weight : Approx 6.0g a. Type No. b. Lot No.
- V CE Characteristics (Typical)
0 70 m A
600m A
V CE (sat),V BE (sat)
- I C Temperature Characteristics (Typical)
Collector-Emitter Saturation Voltage V C E (s at ) (V ) Base-Emitter Saturation Voltage V B E (s at) (V) 1.5 I C /I B =5 Const.
- V BE Temperature Characteristics (Typical)
(V C E =4V) 7
4 Collector Current I C (A)
400 m A
6 Collector Current I C (A) 0.5 1 5 7
250 m...
