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Equivalent circuit
C
Darlington
2SD2560
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=150V VEB=5V IC=30mA VCE=4V, IC=10A IC=10A, IB=10mA IC=10A, IB=10mA VCE=12V, IE=–2A VCB=10V, f=1MHz 2SD2560 100max 100max 150min 5000min∗ 2.5max 3.0max 70typ 120typ V V MHz pF
20.0min 4.0max 2 3 1.05 +0.2 -0.1 5.45±0.1 B C E 5.45±0.1
B
(70 Ω )
E
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1647) sAbsolute maximum ratings (Ta=25°C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SD2560 150 150 5 15 1 130(Tc=25°C) 150 –55to+150 Unit V V V A A W °C °C
Application : Audio, Series Regulator and General Purpose
(Ta=25°C) Unit
5.0±0.2 2.0 1.8
External Dimensions MT-100(TO3P)
15.6±0.4 9.6 4.8±0.2 2.0±0.1
µA µA
19.9±0.3
V
4.0
a b
ø3.