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N-Channel MOS FET
FKP202
■Features
●Low on-resistance ●Low input capacitance ●Avalanche energy capability guarantee
March. 2007
■Package---FM20 (TO220 Full Mold)
■Applications
●PDP driving ●High speed switching
■Equivalent circuit
D (2) G (1)
S (3)
■Absolute maximum ratings
Parameter
Symbol
Rating
(Ta=25°C） Unit
Drain to Source Voltage
VDSS
200
V
Gate to Source Voltage
VGSS
±30
V
Continuous Drain Current
ID
±45A
A
Pulsed Drain Current
ID(pulse) *1
±180A
A
Maximum Power Dissipation Single Pulse Avalanche Energy
PD EAS *2
40 (Tc=25°C)
W
200
mJ
Avalanche Current
IAS
45
A
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
－55 to 150
°C
*1. PW≤100μs，duty cycle≤１% *2. VDD=20V, L=180μH，ILp=45A, unclamped, RG=50Ω, See Fig.1
.
Sanken Electric Co.
FKP202 Datasheet
