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MOSFET
FKP252
December. 2005
■Features
• Low on-resistance • Low input capacitance • Avalanche energy capability guaranteed
■Applications
• PDP driving • High speed switching
■Equivalent circuit
D (2)
G (1)
■Package---TO220F
S (3)
Absolute maximum ratings
(Ta=25°C)
Characteristic
Symbol
Rating
Unit
Drain to Source Voltage
VDSS
250
V
Gate to Source Voltage
VGSS
±30
V
Continuous Drain Current
ID
±25A
A
Pulsed Drain Current
ID(pulse) *1
±100A
A
Maximum Power Dissipation Single Pulse Avalanche Energy
PD EAS *2
40 (Tc=25°C)
W
200
mJ
Avalanche Current
IAS
25
A
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
-55 to 150
°C
*1 PW≤100μsec, duty cycle≤1% *2 VDD=20V, L=590μH, ILp=25A, unclamped, RG=50Ω, See Fig.1
.
Sanken Electric Co.,Ltd.
FKP252 Datasheet
