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N-Channel MOS FET
FKP253
■Features
●Low on-resistance ●Low input capacitance ●Avalanche energy capability guaranteed
June, 2007 ■Package---FM20 (TO220 Full Mold)
■Applications
●PDP driving ●High speed switching
■Equivalent circuit
D (2) G (1)
S (3)
■Absolute maximum ratings
Parameter
Symbol
Rating
(Ta=25°C） Unit
Drain to Source Voltage
VDSS
250
V
Gate to Source Voltage
VGSS
±30
V
Continuous Drain Current
ID
±20A
A
Pulsed Drain Current
ID(pulse) *1
±80A
A
Maximum Power Dissipation Single Pulse Avalanche Energy
PD EAS *2
40 (Tc=25°C)
W
160
mJ
Avalanche Current
IAS
20
A
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
－55 to 150
°C
*1 PW≤100μs，duty cycle≤１% *2 VDD=20V, L=740μH，ILp=20A, unclamped, RG=50Ω, See Fig.1
Sanken Electric Co., Ltd.
FKP253 Datasheet
