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N-Channel MOS FET
FKP280A
September, 2005
■Features
●Low on-resistance ●Low input capacitance ●Avalanche energy capability guaranteed
■Package---FM100(TO3P Full Mold)
■Applications
●PDP driving ●High speed switching
■Equivalent circuit
Designs
ew Ｇ(1)
Ｄ(2)
or N Ｓ(3)
ed f ■Absolute maximum ratings end Parameter
m Drain to Source Voltage m Gate to Source Voltage o Continuous Drain Current ec Pulsed Drain Current R Maximum Power Dissipation ot Single Pulse Avalanche Energy N Avalanche Current
Symbol VDSS VGSS
ID ID(pulse) *1
PD EAS *2
IAS
(Ta=25°C)
Rating
Unit
280
Ｖ
±30
Ｖ
±40A
Ａ
±160A
Ａ
85 (Tc=25°C)
Ｗ
400
ｍＪ
40
Ａ
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
-55 to +150
°C
*1. PW ≤ 100 μsec, duty cycle ≤ 1% *2.
FKP280A Datasheet
