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MOS FET Array STA508A
Absolute Maximum Ratings
Symbol VDSS VGSS ID ID (pulse)*1 PT Ratings 120 ± 20 ±6 ± 10
4 (Ta = 25ºC) 20 (Tc = 25ºC) EAS *2 80 mJ Tch ºC 150 Tstg ºC –55 to +150 *1 PW 100µs, duty 1% *2 VDD = 12V, L = 10mH, unclamped, RG = 50Ω
(Ta=25ºC) Unit V V A A W W
Electrical Characteristics
Symbol V(BR) DSS IGSS IDSS VTH Re (yfs) RDS (ON) Ciss Coss Crss t d (on) tr t d (off) tf VSD Test Conditions ID = 100µA, VGS = 0V VGS = ± 20V VDS = 120V, VGS = 0V VDS = 10V, ID = 250µA VDS = 10V, ID = 4.0A VGS = 10V, ID = 4.0A VGS = 4V, ID = 4.0A VDS = 10V f = 1.0MHz VGS = 0V ID = 4A VDD 12V RL = 3Ω VGS = 5V RG = 50Ω min 120 ±5 100 2.0 0.15 0.2 400 130 30 100 300 250 200 1.0 0.2 0.25 Ratings typ max
(Ta=25ºC) Unit
External Dimensions STA4 (LF412)
25.25
±0.2
1.0 5.
STA508A Datasheet
