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STA509A Datasheet

MOS FET Array

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MOS FET Array STA509A
Absolute Maximum Ratings (Ta=25ºC) Electrical Characteristics
(Ta=25ºC) External Dimensions STA
Symbol
VDSS
Ratings
52±5
Unit
Symbol
Test Conditions
Ratings
Unit
V min typ max
25.25±0.2
VGSS
±20
V
V(BR) DSS ID = 1mA, VGS = 0V
47 52
57 V
ID
ID (pulse) *1
±3
±6
A IGSS
VGS = ±20V
A IDSS VDS = 40V, VGS = 0V
±1.0 µA
100 µA
b
a
PT
4 (Ta = 25ºC)
20 (Tc = 25ºC)
W
W
VTH
Re (yfs)
VDS = 10V, ID = 250µA
VDS = 10V, ID = 1.0A
1.0
1.0
2.5 V
S
EAS *2
Tch
40
150
mJ
ºC
RDS (ON)
VGS = 10V, ID = 1.0A
VGS = 4V, ID = 1.0A
0.2 0.25
0.25 0.3
1.0±0.25
0.5±0.15
0±0.3
9 •2.54=22.86±0.05
(2.54)
0±0.3
Tstg
–55 to +150
ºC
Ciss
VDS = 10V
200 pF
*1 PW 100µs, duty 1%
om*2 VDD =12V, L =10mH, unclamped, RG =10
Coss
Crss
td (on)
tr
td (off)
tf
VSD
.cs IDVDS Characteristics
6
U5
VGS = 5V
VGS = 10V
t44
VGS = 4V
3
e2
VGS = 3V
e1
h0
0 2 4 6 8 10 12 14
SVDS (V)
f = 1.0MHz
VGS = 0V
ID = 1A
VDD 12V
RL = 12
VGS = 5V
RG1 = 50, RG2 = 10
ISD = 6A, VGS = 0V
120
20
2.0
7.4
3.3
4.2
1.0 1.5
pF
pF
µs
µs
µs
µs
V
s ID VGS Characteristics
20
10 VDS = 10V
1
0.1 Ta = –55ºC
25ºC
75ºC
150ºC
0.01
01234 56
VGS (V)
tas RDS (on)— TC Characteristics
0.5
aID = 1A
0.4 VGS = 4V
typ.
.D0.3
w0.2
VGS = 10V
typ.
0.1
w0
w–50
0
50 100 150
s Re (yfs) — ID Characteristics
10
VDS = 10V
5
1
0.5
0.2
0.05 0.1
Ta = –55ºC
25ºC
150ºC
0.5 1
6
C1.5±0.5
1 2 3 4 5 6 7 8 9 10
S GD GD GD GDS
a) Type No.
b) Lot No.
(Unit: mm)
s RDS (on) — ID Characteristics
0.8
VGS = 4V
Ta = 150ºC
0.6
75ºC
0.4 25ºC
–55ºC
0.2
0
0 1 23 4 5 6
ID (A)
s IDR VSD Characteristics
10
8
6 Ta = 150ºC
75ºC
25ºC
4 –55ºC
2
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
Tc (ºC)
ID (A)
.coms Safe Operating Area (single pulse)
10 (Tc = 25ºC)
UID (pulse) max
et45 (on)LIMITED
eRDS
1m10s0µs
h1
taS0.5
VSD (V)
Equivalent Circuit Diagram
3579
2468
1
10
.Da0.1
www0.5 1
5 10
VDS (V)
50
80


Part Number STA509A
Description MOS FET Array
Maker Sanken electric
Total Page 1 Pages
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