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MOS FET Array STA509A
Absolute Maximum Ratings (Ta=25ºC)
Symbol VDSS VGSS ID ID (pulse) *1 PT Ratings 52± 5 ± 20 ±3 ±6 Unit V V A A W W
Electrical Characteristics
Symbol V(BR) DSS IGSS IDSS VTH Re (yfs) RDS (ON) Ciss Coss Crss t d (on) tr t d (off) tf VSD Test Conditions ID = 1mA, VGS = 0V VGS = ± 20V VDS = 40V, VGS = 0V VDS = 10V, ID = 250µA VDS = 10V, ID = 1.0A VGS = 10V, ID = 1.0A VGS = 4V, ID = 1.0A VDS = 10V f = 1.0MHz VGS = 0V ID = 1A VDD 12V RL = 12Ω VGS = 5V RG1 = 50Ω, RG2 = 10Ω ISD = 6A, VGS = 0V min 47 Ratings typ 52 max 57 ± 1.0 100 2.5 0.25 0.3
(Ta=25ºC) Unit
External Dimensions STA
25.25
±0.2
4 (Ta = 25ºC) 20 (Tc = 25ºC) EAS *2 40 mJ Tch ºC 150 Tstg ºC –55 to +150 *1 PW 100µs, duty 1% *2 VDD = 12V, L = 10mH, unclamped, RG = 10Ω
1.0 1.0 0.2 0.25 200 120 20 2.0 7.4 3.3 4.