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25FV101T - LE25FV101T

Datasheet Summary

Description

Uerase, byte programmable serial Flash EEPROM.

eEEPROM technology.

Features

  • CMOS Flash EEPROM Technology aSingle 3.3-Volt Read and Write Operations . DSector Erase Capability: 256 Bytes per sector wOperating Frequency: 10MHz wLow Power Consumption w Active Current (Read): 25 mA (Max. ) High Read/Write Reliability Sector-write Endurance Cycles: 104 10 Years Data Retention Self-timed Erase and Programming Byte Programming: 35 µs (Max. ) End of Write Detection: Status Register Read Standby Current: 20 µA (Max. ) Serial Peripheral Interface (S. P. I. ) mode 0. Hardware Data Pro.

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Datasheet preview – 25FV101T

Datasheet Details

Part number 25FV101T
Manufacturer Sanyo
File Size 99.93 KB
Description LE25FV101T
Datasheet download datasheet 25FV101T Datasheet
Additional preview pages of the 25FV101T datasheet.

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Full PDF Text Transcription

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omPreliminary Specifications CMOS LSI LE25FV101T t4U.c1M (128k words × 8bits) Serial Flash EEPROM taSheeFeatures CMOS Flash EEPROM Technology aSingle 3.3-Volt Read and Write Operations .DSector Erase Capability: 256 Bytes per sector wOperating Frequency: 10MHz wLow Power Consumption w Active Current (Read): 25 mA (Max.) High Read/Write Reliability Sector-write Endurance Cycles: 104 10 Years Data Retention Self-timed Erase and Programming Byte Programming: 35 µs (Max.) End of Write Detection: Status Register Read Standby Current: 20 µA (Max.) Serial Peripheral Interface (S.P.I.) mode 0. Hardware Data Protection Packages Available: MSOP8(225mil) .comProduct Description Device Operation The LE25FV101T is a 128K x 8 CMOS sector Uerase, byte programmable serial Flash EEPROM.
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