2SA2127 Datasheet | SANYO

atures - - - Adoption of MBIT process. Low saturation voltage. High current capacity and wide ASO. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Conditions Ratings --50 --50 --6 --2 --4 --400 1 150 --55 to +150 Unit V V V A A m A W °C °C Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Symbol ICBO IEBO h FE1 h FE2 f T Cob VCB=-40V, IE=0 VEB=--4V, IC=0 VCE=-2V, IC=-100m A VCE=-2V, IC=-1.5A VCE=-10V, IC=-300m A VCB=-10V, f=1MHz 200 40 420 16 MHz p F Conditions Ratings min typ max --1 --1 560 Unit µA µA Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor pany TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 21805EA TS IM TB-00000380 No.8022-1/4 Free Datasheet http://../ Continued from preceding page. Parameter Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage...