2SD1710 transistor equivalent, npn triple diffused planar silicon transistor.
* High speed(tf=500ns max).
* High breakdown voltage(VCBO=1500V).
* High reliability(Adoption of HVP process).
* Adoption of MBIT process.
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Features
* High speed(tf=500ns max).
* High breakdown voltage(VCBO=1500V).
* High reliability(Adoption of H.
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