Enables simplified fabrication, high-density mounding, and miniaturization in end products due to the surface mountable
package. Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature
Symbol
VDSS VGSS
ID IDP PD Tch
Tstg
Conditions
PW≤10μs, duty cycle≤1% Tc=25°C
Elec.
Full PDF Text Transcription for 2SK2532 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
2SK2532. For precise diagrams, and layout, please refer to the original PDF.
Ordering number : EN5457 2SK2532 SANYO Semiconductors DATA SHEET 2SK2532 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • Low ON-resistan...
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neral-Purpose Switching Device Applications Features • Low ON-resistance. • High-speed diode. • Enables simplified fabrication, high-density mounding, and miniaturization in end products due to the surface mountable package.
2SK2532 Datasheet
