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Ordering number : ENN8014
2SK3822
2SK3822
N-Channel Silicon MOSFET
General-Purpose Switching Device Applications
Features
• Low ON-resistance. • 4V drive. • Ultrahigh-speed switching. • Motor drive, DC / DC converter. • Avalanche resistance guarantee.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature Storage Temperature Avalanche Enargy (Single Pulse) *1 Avalanche Current *2 Note : *1 VDD=20V, L=200µH, IAV=52A
*2 L≤200µH, single pulse
Symbol VDSS VGSS
ID IDP
PD
Tch Tstg EAS IAV
Conditions
PW≤10µs, duty cycle≤1% Tc=25°C
Ratings 100 ±20 52 208 1.