2SK3834 Datasheet PDF (N-Channel Silicon MOSFET)

2SK3834 - N-Channel Silicon MOSFET

Features

Low ON-resistance.
Ultrahigh-speed switching.
4V drive.
Motor drive, DC / DC Converter.
Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Energy (Single Pulse).
1 Avalanche Current.
2.
1. VDD=20V, L=100µH, IAV=60A.
2. L≤100.

Datasheet Details

Part number	2SK3834
Manufacturer	SANYO (now Panasonic)
File Size	40.00 KB
Description	N-Channel Silicon MOSFET
Datasheet	2SK3834 Datasheet
Additional preview pages of the 2SK3834 datasheet.

📁 Similar Datasheet

2SK383 - N-Channel MOSFET Transistor (Inchange Semiconductor)

2SK383 - Silicon N-Channel MOS FET (Hitachi)

2SK3830 - N-Channel MOSFET (Sanyo Semicon Device)

2SK3831 - N-Channel Silicon MOSFET (Sanyo Semicon Device)

2SK3800 - MOSFET (Sanken)

2SK3800 - N-Channel MOSFET (INCHANGE)

2SK3801 - MOSFET (Sanken)

2SK3801 - N-Channel MOSFET (INCHANGE)

2SK3803 - MOSFET (Sanken)

2SK3804-01S - N-CHANNEL SILICON POWER MOSFET (Fuji Electric)

Full PDF Text Transcription

Click to expand full text

Ordering number : ENN8017 2SK3834 N-Channel Silicon MOSFET 2SK3834 General-Purpose Switching Device Applications Features • Low ON-resistance. • Ultrahigh-speed switching. • 4V drive. • Motor drive, DC / DC Converter. • Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Energy (Single Pulse) *1 Avalanche Current *2 *1. VDD=20V, L=100µH, IAV=60A *2. L≤100µH, 1 Pulse Symbol VDSS VGSS ID IDP PD Tch Tstg EAS IAV Electrical Characteristics at Ta=25°C Conditions PW≤10µs, duty cycle≤1% Tc=25°C Ratings 100 ±20 60 240 2.

Published: Jun 16, 2016 |