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2SK4210 - N-Channel Silicon MOSFET

Key Features

  • Low ON-resistance, ultrahigh-speed switching.
  • Adoption of high reliability HVP process.
  • Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Symbol VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Temperature Tch Storage Temperature Tstg Avalanche Energy (Single Pulse).
  • 1 EAS Avalanche Current.
  • 2 IAV Note :.
  • 1.

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Full PDF Text Transcription for 2SK4210 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for 2SK4210. For precise diagrams, and layout, please refer to the original PDF.

Ordering number : ENA1517 2SK4210 SANYO Semiconductors DATA SHEET 2SK4210 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • Low ON-resista...

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eneral-Purpose Switching Device Applications Features • Low ON-resistance, ultrahigh-speed switching. • Adoption of high reliability HVP process. • Avalanche resistance guarantee.

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