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A1406 - 2SA1406

Key Features

  • High fT : fT typ=400MHz.
  • High breakdown voltage : VCEO≥200V.
  • Small reverse transfer capacitance and excellent HF response : Cre=1.4pF (NPN), 1.7pF (PNP).
  • Complementary PNP and NPN types.
  • Adoption of FBET process. ( ) : 2SA1406 Specifications 1.5 3.0 7.0 11.0 1.6 0.8 0.8 0.6 3.0 1.2 12 3 2.4 4.8 15.5 0.5 1 : Emitter 2 : Collector 3 : Base SANYO : TO-126 Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emi.

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Other Datasheets by SANYO (now Panasonic)

Part Number Description
A1402 2SA1402
A1403 2SA1403
A1404 2SA1404
A1405 2SA1405
A1415 2SA1415

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number:ENN1765B PNP/NPN Epitaxial Planar Silicon Transistors 2SA1406/2SC3600 Ultrahigh-Definition CRT Display Video Output Applications Applications · Ultrahigh-definition CRT display. · Video output. · Color TV chroma output. · Wide-band amp. Package Dimensions unit:mm 2009B [2SA1406/2SC3600] 8.0 4.0 2.7 Features · High fT : fT typ=400MHz. · High breakdown voltage : VCEO≥200V. · Small reverse transfer capacitance and excellent HF response : Cre=1.4pF (NPN), 1.7pF (PNP). · Complementary PNP and NPN types. · Adoption of FBET process. ( ) : 2SA1406 Specifications 1.5 3.0 7.0 11.0 1.6 0.8 0.8 0.6 3.0 1.2 12 3 2.4 4.8 15.5 0.