A1480 - 2SA1480

Features

High breakdown voltage (VCEO≥300V).
Small reverse transfer capacitance and excellent high frequency characteristic : Cre=1.8pF (NPN), 2.3pF (PNP).
Adoption of MBIT process. Package Dimensions unit:mm 2042B [2SA1480/2SC3790] 8.0 4.0 1.0 1.0 3.3 1.5 1.4 3.0 7.5 15.5 11.0 3.0 1.6 0.8 0.8 0.75 0.7 ( ) : 2SA1480 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current.

Sanyo

Datasheet Details

Part number	A1480
Manufacturer	SANYO
File Size	41.38 KB
Description	2SA1480
Datasheet	A1480 Datasheet
Additional preview pages of the A1480 datasheet.

📁 Similar Datasheet

A1485 - 2SA1485 (Hitachi Semiconductor)
A1486 - 2SA1486 (NEC)
A1488 - 2SA1488 (SavantIC)
A1488A - 2SA1488A (SavantIC)
A1489 - SILICON POWER TRANSISTOR (SavantIC)
A1407 - 2SA1407 (Sanyo Semicon Device)
A1408 - 2SA1408 (Toshiba Semiconductor)
A141 - Tetrode (Philips)
A14100A - HiRel FPGAs (Actel)
A1413 - PNP SILICON TRIPLE DIFFUSED TRANSISTOR (NEC)

Other Datasheets by Sanyo

A1402 - 2SA1402
A1403 - 2SA1403
A1404 - 2SA1404
A1405 - 2SA1405
A1406 - 2SA1406
A1415 - 2SA1415
A1416 - 2SA1416
A1417 - 2SA1417

Full PDF Text Transcription

Click to expand full text

Ordering number:ENN2254 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1480/2SC3790 High-Definiton CRT Display Video Output Applications Features · High breakdown voltage (VCEO≥300V). · Small reverse transfer capacitance and excellent high frequency characteristic : Cre=1.8pF (NPN), 2.3pF (PNP). · Adoption of MBIT process. Package Dimensions unit:mm 2042B [2SA1480/2SC3790] 8.0 4.0 1.0 1.0 3.3 1.5 1.4 3.0 7.5 15.5 11.0 3.0 1.6 0.8 0.8 0.75 0.

Published: Apr 19, 2015 |