Very small-sized package permitting 2SA1813-
applied sets to be made smaller and slimmer.
Adoption of FBET process.
High DC current gain (hFE=500 to 1200).
Low collector-to-emitter saturation voltage
(VCE(sat)≤0.3V).
High VEBO (VEBO≥15V). Package Dimensions
unit:mm 2059A
[2SA1813]
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse.
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
A1813. For precise diagrams, and layout, please refer to the original PDF.
Ordering number:EN3972 PNP Epitaxial Planar Silicon Transistor 2SA1813 Low-Frequency General-Purpose Amplifier Driver, Muting Circuit Applications Features · Very small-s...
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Amplifier Driver, Muting Circuit Applications Features · Very small-sized package permitting 2SA1813- applied sets to be made smaller and slimmer. · Adoption of FBET process. · High DC current gain (hFE=500 to 1200). · Low collector-to-emitter saturation voltage (VCE(sat)≤0.3V). · High VEBO (VEBO≥15V).
A1813 Datasheet
