A2180 Datasheet | SANYO

Features - Adoption of MBIT processes. - Large current capacitance. - Low collector-to-emitter saturation voltage. - High-speed switching. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB Tj Tstg Tc=25°C Electrical Characteristics at Ta=25°C Conditions Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Symbol ICBO IEBO h FE1 h FE2 f T Cob Conditions VCB=--40V, IE=0A VEB=--4V, IC=0A VCE=--2V, IC=--125m A VCE=--2V, IC=--3.75A VCE=--10V, IC=--300m A VCB=--10V, f=1MHz Ratings --50 --50 --6 --5 --8 --1 2 20 150 --55 to +150 Unit V V V A A A W W °C °C min 200 50 Ratings typ max --10 --10 500 Unit µA µA 130 MHz 55 p F Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor pany TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN N2505FA MS IM TB-00001827 No.8526-1/4 2SA2180 Continued from preceding...