Adoption of FBET, MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. High allowable power dissipation. Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperatu.
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A2201. For precise diagrams, and layout, please refer to the original PDF.
Ordering number : ENA0581 2SA2201 SANYO Semiconductors DATA SHEET 2SA2201 Applications • PNP Epitaxial Planar Silicon Transistor High-Voltage Switching Applications DC / ...
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al Planar Silicon Transistor High-Voltage Switching Applications DC / DC converters, relay drivers, lamp drivers, motor drivers. Features • • • • • Adoption of FBET, MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. High allowable power dissipation. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCES VCEO VEBO IC I
A2201 Datasheet
